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Part: 1N4933G
Category:
Discrete
-> Diodes & Rectifiers
-> Fast Rectifiers
-> Glass Passivated
Description: Pakage = DO-41 ;; Max. Reverse Voltage VRM (V)= 50 ;; Max. Aver. Rect. Current io (A)= 1 ;; Ifsm (A)= 30
Company: Taiwan Semiconductor (TSC)
Datasheet: Download 1N4933G datasheet File size : 406 kB
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Datasheet text preview:
1N4933G THRU 1N4937G
1.0 AMP. Glass Passivated Fast Recovery Rectifiers
Voltage Range 50 to 600 Volts Current 1.0 Ampere
Features
a a a a a a a Low forward voltage drop High current capability High reliability High surge current capability
DO-41
Mechanical Data
Cases: Molded plastic DO-41 Epoxy: UL 94V-O rate flame retardant Lead: Axial leads, solderable per MILSTD-202, Method 208 guaranteed a Polarity: Color band denotes cathode end a High temperature soldering guaranteed: 260oC/10 seconds/.375",(9.5mm) lead lengths at 5 lbs., (2.3kg) tension a Weight: 0.34gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25+ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% 1N 1N Symbol Type Number
4933G Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current .375 (9.5mm) Lead Length @TA = 75+ Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 1.0A Maximum DC Reverse Current @ TA=25+ at Rated DC Blocking Voltage @ TA=125+ Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Typical Thermal Resistance (Note 3)
4934G
1N 4935G
1N 4936G
1N 4937G
Units
V V V A A V uA uA nS pF +/W + +
V RRM VRMS V DC I(AV) IF S M VF IR
50 35 50
100 70 100
200 140 200 1.0 30 1.2
400 280 400
600 420 600
5.0 100 Trr 200 Cj 15 R JA 55 Operating Temperature Range TJ -65 to +150 Storage Temperature Range T STG -65 to +150 Notes: 1. Reverse Recovery Test Conditions: IF=1.0A, VR=30V, di/dt=50A/uS, Irr=10% IRM for Measurement of trr. 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 3. Thermal Resistance from Junction to Ambient at 0.375" (9.5mm) Lead Length, P.C.B. Mounted
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R E V . 1 Oct.-2003
RATINGS AND CHARACTERISTIC CURVES (1N4933G THRU 1N4937G)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr
NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms
-1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm
AVERAGE FORWARD RECTIFIED CURRENT AMPERES
1.0 .8 .6
FIG.2- MAXIMUM FORWARD CURRENT DERATING CURVE
FIG.5- TYPICAL FORWARD CHARACTERISTICS
20 10
INSTANTANEOUS FORWARD CURRENT. (A)
3.0
.4 .2 0
1.0
0.3
0
25
50
75
100
o
125
150
175
AMBIENT TEMPERATURE. ( C)
0.1
Tj=25oC Pulse Width=300 s 1% Duty Cycle
PEAK FORWARD SURGE CURRENT AMPERES
30
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
TA=75 C 8.3ms Single Half Sine Wave JEDEC Method
0
.03
20
.01 0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE. (V)
FIG.6- TYPICAL REVERSE CHARACTERISTICS
10 100
1.0 CYCLE
0 1 2 4 6 8 10 20 40 60 80 100 NUMBER OF CYCLES AT 60Hz
INSTANTANEOUS REVERSE CURRENT. (µ A)
TA=100 0C
10
FIG.4- TYPICAL JUNCTION CAPACITANCE
20
JUNCTION CAPACITANCE.(pF)
10
Tj=25 0C
1.0
TA=25 0C
f=1 MHz Vsig=50mVp-p 1 1 10 REVERSE VOLTAGE. (V) 100
.10 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
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