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Details, datasheet, quote on part number:ES2C
 
 
Part:ES2C
Category:Discrete => Diodes & Rectifiers => Super Fast Recovery Rectifiers => Glass Passivated
Description:Pakage = SMB/DO-214AA ;; Max. Reverse Voltage VRM (V)= 150 ;; Max. Aver. Rect. Current io (A)= 2 ;; Ifsm (A)= 50
Company:Taiwan Semiconductor (TSC)
Datasheet:Download ES2C datasheet   File size : 75 kB
Request For quote:  Find where to buy ES2C
 



Datasheet text preview:
ES2A THRU ES2J
2.0 AMPS. Super Fast Surface Mount Rectifiers
Voltage Range 50 to 600 Volts Current 2.0 Amperes

Features
a a a a a a a a a a Glass passivated junction chip For surface mounted application Low profile package Built-in strain relief Ideal for automated placement Easy pick and place Superfast recovery time for high efficiency Glass passivated chip junction High temperature soldering: O 260 C/10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-O
.082(2.08) .076(1.93)

SMB/DO-214AA

.147(3.73) .137(3.48)

.187(4.75) .167(4.25) .012(.31) .006(.15)

Mechanical Data
a a a a Cases: Molded plastic Term inals: Solder plated Polarity: Indicated by cathode band Packing: 12mm tape per E1A STD RS-481 Weight: 0.093 gram

.103(2.61) .078(1.99) .012(.31) .006(.15) .056(1.41) .035(0.90) .208(5.28) .200(5.08) .008(.20) .004(.10)

a Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics
Rating at 25+ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol ES ES ES Type Number 2A 2B 2C Maximum Recurrent Peak Reverse 50 100 150 VRRM
Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current See Fig. 1 Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 2.0A Maximum DC Reverse Current @TA =25+ at Rated DC Blocking Voltage @ T A= 1 0 0 + Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Maximum Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range

ES 2D 200 140 200

ES 2F 300 210 300

ES 2G 400 280 400

ES 2H 500 350 500

ES 2J 600 420 600

Units
V V V A A

VRMS VDC I(AV) IF S M VF IR Trr Cj
R R JA JL TJ TSTG

35 50

70 100

105 150

2.0 50 0.95 10 350 35 25 75 20 -55 to +150 -55 to + 150 20 1.3 1.7

V uA uA nS pF +/W + +

Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied VR=4.0 Volts 3. Units Mounted on P.C.B. 5.0 x 5.0mm (0.013mm thick) Pad Areas

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REV.1 Oct.-2003

RATINGS AND CHARACTERISTIC CURVES (ES2A THRU ES2J)
FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE
3.0 60 RESISTIVE OR INDUCTIVE LOAD 0.2X0.2"(5.0X5.0mm) COPPER PAD AREAS 2.0

FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT. (A)
8.3ms Single Half Sine Wave o (JEDEC Method) at TL=120 C

AVERAGE FORWARD CURRENT. (A)

50

40

30

1.0

20 10 0 1 10 NUMBER OF CYCLES AT 60Hz 100

0 80 90 100 110 120
o

130

140

150

LEAD TEMPERATURE. ( C)

60

FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
Tj=25 C PULSE WIDTH-300 S 1% DUTY CYCLE
0

FIG.4- TYPICAL REVERSE CHARACTERISTICS
1000

INSTANTANEOUS FORWARD CURRENT. (A)

INSTANTANEOUS REVERSE CURRENT. ( A)

10

100 Tj=125 0C

ES

2A

-D

ES

2F

-J

10 Tj=85 0C

1

1 Tj=25 0C

0.1

0.1

0.01 0.4

0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 20 40 60 80 100 120 140 FORWARD VOLTAGE. (V) PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)

FIG.5- TYPICAL JUNCTION CAPACITANCE
60

JUNCTION CAPACITANCE.(pF)

50

Tj=25 0C f=1.0MHz Vsig=50mVp-p

40

30 20

ES

2A

-D

ES 2F -

J

10 0 0 1 10 100 REVERSE VOLTAGE. (V)

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