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Part: MUR190

Category:
 Discrete
   -> Diodes & Rectifiers
     -> High Efficiency

Description: Pakage = DO-15 ;; Max. Reverse Voltage VRM (V)= 900 ;; Max. Aver. Rect. Current io (A)= 1 ;; Ifsm (A)= 35

Company: Taiwan Semiconductor (TSC)

Datasheet: Download MUR190 datasheet     File size : 97 kB

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Datasheet text preview:
MUR190
1.0 AMP. Ultrafast Glass Passivated Rectifiers
Voltage Range 900 Volts Current 1.0 Ampere
Features
a a a a
a a a a a a
DO-204AC (DO-15)
D esigned for use in switching power supplies, inverters and as free wheeling diodes Low forward voltage drop H igh reliability 175OC operating junction temperature
Mechanical Data
C a se: Molded plastic E pox y : UL 94V-O rate flame retardant Lead: Axial leads, solderable per MIL-STD202, Method 208 guaranteed P ola rity: Color band denotes cathode end H ig h temperature soldering guaranteed: o 260 C /10 seconds/.375",(9.5mm) lead lengths at 5 lbs., (2.3kg) tension W e ig h t: 0.34 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25+ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol Type Number
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current (Square Wave Note 4) @T A = 95+ Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 1.0A Tj=150+ Tj=25+ Maximum DC Reverse Current @ T A= 2 5+ at Rated DC Blocking Voltage @ TA= 1 2 5 + Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance Typical thermal resistance Operating Temperature Range Storage Temperature Range ( Note 2 ) R (Note 3)
VRRM VRMS VDC I(AV) IF S M
MUR190 900 630 900 1.0 35 1.5 1.7 5.0 150 75 15 50 -65 to +175 -65 to +175
Units V V V A A V
uA uA
VF IR Trr Cj
JA TJ TSTG
nS pF +/W + +
Notes: 1. Reverse Recovery Test Conditions: IF= 0 .5 A , IR= 1 .0 A , IRR= 0 .2 5 A 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 3. Thermal Resistance from Junction to Ambient with units mounted on 1.5" x 1.5" Copper Surface. 4. Pulse Test: Pulse Width = 300uS, Duty Cycle .2.0%.
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REV.1 Nov.-2003
RATINGS AND CHARACTERISTIC CURVES (MUR190)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE
5.0
MOUNTING METHOD L = 3 /8 "
INSTANTANEOUS REVERSE CURRENT. ( A)
FIG.2- TYPICAL REVERSE CHARACTERISTICS
1000
4.0
RATED VR O R JA = 50 C/W
3.0
100
Tj = 125 C
O
2.0
dc SQUARE WAVE
0 50 100 150 200
O
1.0
Board G round Plane P.C. Board with 1-1/2" X 1-1/2" C opper Surface
10
0
250
1.0
Tj = 25 C
O
TA, AMBIENT TEMPERATURE ( C)
FIG.3- TYPICAL FORWARD CHARACTERISTICS
20
0.1 0 20 40 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
10 7.0 5.0
FIG.4- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT. (A)
40 35 30 25 20 15 10 0
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
3.0 2.0
25 C 100 C
O
O
8.3ms Single Half Sine Wave JEDEC Method
1.0 0.7 0.5 0.3 0.2
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
FIG.5- TYPICAL JUNCTION CAPACITANCE
0.1 0.07 0.05 0.03 0.02 70
JUNCTION CAPACITANCE. (pF)
60 50 40 30 20 10 0
0.01
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
Tj = 25 C
O
VF, INSTANTANEOUS VOLTAGE (VOLTS)
1
.5
1
2
5
10
20
50
100 200
500
REVERSE VOLTAGE. (V)
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