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Details, datasheet, quote on part number:UTCD965SS
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Datasheet text preview:
UTC D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR
FEATURES
*Collector current up to 5A * D965SS : Collector-Emitter voltage up to 20 V * D965ASS : Collector-Emitter voltage up to 30 V
2 1
APPLICATIONS
* Audio amplifier * Flash unit of camera * Switching circuit
3
MARKING(D965SS)
MARKING(D965ASS)
SOT-23
D65
D65A
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-base voltage Collector-emitter voltage D965SS D965ASS Emitter-base voltage Collector dissipation(Ta=25°C) Collector current Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO
RATING
40 20 30 7 750 5 150 -65 ~ +150
UNIT
V V
VEBO Pc Ic Tj TSTG
V mW A °C °C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
Collector-base breakdown voltage Collector-emitter breakdown voltage D965SS D965ASS Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain(note)
SYMBOL
BVCBO BVCEO
TEST CONDITIONS
Ic=100µA,IE=0 Ic=1mA,IB=0
MIN
40 20 30 7
TYP
MAX
UNIT
V V
BVEBO ICBO IEBO hFE
IE=10µA,Ic=0 VCB=10V,IE=0 VEB=7V,Ic=0 VCE=2V,Ic=1mA VCE=2V,Ic=0.5A VCE=2V,Ic=2A
100 100 200 230 150 800
V nA nA
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R206-016,B
UTC D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR
PARAMETER
Collector-emitter saturation voltage Current gain bandwidth product Output capacitance
SYMBOL
VCE(sat) fT Cob
TEST CONDITIONS
Ic=3A, IB= 0.1A VCE=6V,Ic=50mA VCB=20V,IE=0 f=1MHz
MIN
TYP
150
MAX
1 50
UNIT
V MHz pF
CLASSIFICATION OF hFE2
RANK RANGE Q 230-380 R 340-600 S 560-800
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
3.0
Fig.2 DC current Gain
3 10 4 10
Fig.3 Base-Emitter on Voltage
IB=3.0mA IB=2.5mA IB=2.0mA
Ic,Collector current (A)
HFE, DC current Gain
2.5
Ic,Collector current (mA)
VCE=2V
3 10
2 10
2.0
IB=1.5mA IB=1.0mA IB=0.5mA
VCE=2V
1.5
1 10
2 10
1.0
0 0 0.4 0.8 1.2 1.6 2.0
0 10
-1 10
1 10
2 10
3 10
4 10
1 10 0 0.2 0.4 0.6 0.8 1.0
Collector-Emitter voltage ( V)
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.4 Saturation voltage
4 10 3 10
Fig.5 Current gain-bandwidth product
3 10
Fig.6 Collector output Capacitance
Ic=10*IB
Current Gain-bandwidth product,f T(MHz)
Saturation voltage (mV)
Cob,Capacitance (pF)
VCE=6V VBE(sat)
2 10
3 10
2 10
f=1MHz IE=0
VCE(sat)
2 10
1 10
1 10
1 10
0 10
1 10
2 10
3 10
4 10
0 10 0 10
1 10
2 10
3 10
0 10 10
-1
0 10
1 10
2 10
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R206-016,B
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