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Details, datasheet, quote on part number:UTCHE8050
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Datasheet text preview:
UTC HE8050
NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR
DESCRIPTION
The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications.
1
FEATURES
*Collector current up to 1.5A *Collector-Emitter voltage up to 25 V *complimentary to UTC HE8550
TO-92
1:EMITTER
2:COLLECTOR
3: BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation(Ta=25°C) Collector Current Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO Pc Ic Tj TSTG
VALUE
40 25 6 1 1.5 150 -65 ~ +150
UNIT
V V V W A °C °C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) VBE fT Cob
Test conditions
Ic=100µA,IE=0 Ic=2mA,IB=0 IE=100µA,Ic=0 VCB=35V,IE=0 VEB=6V,Ic=0 VCE=1V,Ic=5mA VCE=1V,Ic=100mA VCE=1V,Ic=800mA Ic=800mA,IB=80mA Ic=800mA,IB=80mA VCE=1V,Ic=10mA VCE=10V,Ic=50mA VCB=10V,IE=0 f=1MHz
MIN
40 25 6
TY P
MAX
UNIT
V V V nA nA
100 100 45 85 40 135 160 110 500 0.5 1.2 1.0 100 9.0
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance
V V V MHz pF
UTC
UNISONIC TECHNOLOGIES
CO., LTD.
1
QW-R201-009,A
UTC HE8050
RANK RANGE
NPN EPITAXIAL SILICON TRANSISTOR
C 120-200 D 160-300 E 250-500
CLASSIFICATION OF hFE
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
0.5
Fig.2 DC current Gain
3 10 3 10
Fig.3 Base-Emitter on Voltage
IB=3.0mA IB=2.5mA IB=2.0mA
Ic,Collector current (mA)
Ic,Collector current (mA)
VCE=1V
HFE, DC current Gain
0.4
VCE=1V
2 10
2 10
0.3
IB=1.5mA
0.2
IB=1.0mA IB=0.5mA
1 10
1 10
0.1
0
0
0.4
0.8
1.2
1.6
2.0
0 10
-1 10
0 10
1 10
2 10
3 10
0 10 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter voltage ( V)
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.4 Saturation voltage
4 10 3 10
Fig.5 Current gain-bandwidth product
3 10
Fig.6 Collector output Capacitance
Cob,Capacitance (pF)
Ic=10*IB
Saturation voltage (mV)
VBE(sat)
3 10
Current Gain-bandwidth product,fT(MHz)
VCE=10V
2 10
2 10
f=1MHz IE=0
2 10
1 10
1 10
VCE(sat)
1 10
-1 10
0 10
1 10
2 10
3 10
0 10 0 10
1 10
2 10
3 10
0 10
0 10
1 10
2 10
3 10
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
UTC
UNISONIC TECHNOLOGIES
CO., LTD.
2
QW-R201-009,A
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