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Details, datasheet, quote on part number:UTCHE8550
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Datasheet text preview:
UTC HE8550
PNP EPITAXIAL SILIC ON TRANSISTOR
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
DESCRIPTION
The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications.
1
FEATURES
*Collector current up to 1.5A *Collector-Emitter voltage up to 25 V *Complimentary to UTC HE8050
TO-92
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation(Ta=25) Collector Current Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO Pc Ic Tj TSTG
VALUE
-40 -25 -6 1 -1.5 150 -65 ~ +150
UNIT
V V V W A °C °C
ELECTRICAL CHARACTERISTICS(Tj=25°C,unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain(note)
SYMBOL
BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) VBE fT Cob
TEST CONDITIONS
Ic=-100µA,IE=0 Ic=-2mA,IB=0 IE=-100µA,Ic=0 VCB=-35V,IE=0 VEB=-6V,Ic=0 VCE=-1V,Ic=-5mA VCE=-1V,Ic=-100mA VCE=-1V,Ic=-800mA Ic=-800mA,IB=-80mA Ic=-800mA,IB=-80mA VCE=-1V,Ic=-10mA VCE=-10V,Ic=-50mA VCB=-10V,IE=0 f=1MHz
MIN
-40 -25 -6
TY P
MAX
UNIT
V V V nA nA
-100 -100 45 85 40 170 160 80 -0.28 -0.98 -0.66 190 9.0 500 -0.5 -1.2 -1.0
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Current Gain Bandwidth Product Output Capacitance
100
V V V MHz pF
UTC
UNISONIC TECHNOLOGIES
CO. LTD
1
QW-R201-010,A
UTC HE8550
RANK RANGE
PNP EPITAXIAL SILIC ON TRANSISTOR
C 120-200 D 160-300 E 250-500
CLASSIFICATION OF hFE
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
-0.5 3 10
Fig.2 DC current Gain
3 -10
Fig.3 Base-Emitter on Voltage
Ic,Collector current (mA)
Ic,Collector current (mA)
VCE=-1V IB=-3.0mA
-0.3
HFE, DC current Gain
-0.4
VCE=-1V
2 -10
2 10
IB=-2.5mA IB=-2.0mA
-0.2
IB=-1.5mA IB=-1.0mA
1 10
1 -10
-0.1
IB=-0.5mA
0 -0 -0.4 -0.8 -1.2 -1.6 -2.0 0 10 -1 -10 0 -10 1 -10 2 -10 3 -10
0 -10 0 -0.2 -0.4 -0.6 -0.8 -1.0
Collector-Emitter voltage ( V)
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.4 Saturation voltage
4 -10 3 10
Fig.5 Current gain-bandwidth product
3 10
Fig.6 Collector output Capacitance
Cob,Capacitance (pF)
Ic=10*IB
Saturation voltage (mV)
Current Gain-bandwidth product,fT(MHz)
VCE=-10V
2 10
3 -10
VBE(sat)
2 10
f=1MHz IE=0
2 -10
1 10
1 10
VCE(sat)
1 -10
-1 -10
0 -10
1 -10
2 -10
3 -10
0 10
0 -10
1 -10
2 -10
3 -10
0 10
0 -10
1 -10
2 -10
3 -10
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
UTC
UNISONIC TECHNOLOGIES
CO. LTD
2
QW-R201-010,A
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