I Single Bias Supply Operation 3.8 dB Typical Noise Figure at 38 GHz 17 dB Typical Small Signal Gain 0.25 µm Ti/Pd/Au Gates I 100% On-Wafer RF, DC and Noise Figure Testing I 100% Visual Inspection MT 2010
Alpha's four-stage reactively-matched 2840 GHz GaAs MMIC low noise amplifier has typical small signal gain 17 dB with a typical noise figure at 38 GHz. The chip uses Alpha's proven 0.25 µm low noise PHEMT technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process.
Dimensions indicated in mm. All DC (V) pads are 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm.
Characteristic Operating Temperature (TC) Storage Temperature (TST) Bias Voltage (VD) Power In (PIN) Junction Temperature (TJ) Value +150°C 6 VDC 10 dBm 175°C
Parameter Drain Current Small Signal Gain Noise Figure Input Return Loss Output Return Loss Output Power 1 dB Gain Compression1 Thermal = 2840 GHz = 38 GHz = 2840 GHz = 2840 GHz = 38 GHz Condition Symbol IDS G NF RLI RLO JC 15 Min. Typ.3 Max. 50 Unit mA dB dBm °C/W
Parameter Drain Current Small Signal Gain Noise Figure Input Return Loss Output Return Loss Output Power 1 dB Gain Thermal Resistance2
1. Not measured a 100% basis. 2. Calculated value based on measurement of discrete FET.
3. Typical represents the median parameter value across the specified frequency range for the median chip.
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For biasing on, adjust VD from zero to the desired value (4.5 V recommended). For biasing off, reverse the biasing on procedure.
Typical Gain and Noise Figure Performance for Three Bias Conditions
Typical Gain and Noise Figure Performance vs. Drain Bias = VD2)