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Part: IVA-05128
Category:
Analog & Mixed-Signal Processing
-> Amplifiers
Description: Silicon Bipolar Mmic 1.5 GHZ Variable Gain Amplifier
Company: Hewlett-Packard (acquired by Agilent Technologies, Inc.)
Datasheet: Download IVA-05128 datasheet File size : 54 kB
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Datasheet text preview:
Silicon Bipolar MMIC 1.5 GHz Variable Gain Amplifier Technical Data
IVA-05128
Features · 50 MHz to 1.5 GHz
Bandwidth · Data Rates up to 2.0 Gbit/s · High Gain: 26 dB Typical · Wide Gain Control Range: 30 dB Typical · Differential Output Capability · Bias VCC - Vee = 5 V · 5 V TTL Compatible Vgc Control Voltage, lgc < 3 mA · Hermetic Ceramic Surface Mount Package
28 Package
Description
The IVA-05128 is a variable gain amplifier housed in a miniature ceramic hermetic surface mount package. It is designed for narrow or wide bandwidth commercial, industrial and military applications that require high gain and wide gain control range. The amplifier can be used in a singleended or differential output configuration. For low frequency applications (<50 MHz) a bypass capacitor and series resistor are connected to pin 4, the AC Input Ground lead. Typical applications include variable gain amplification for fiberoptic systems at data rates in excess of the 1.24 Gb/s SONET standard, mobile radio and satellite receivers, millimeter wave receiver IF amplifiers and communications receivers. The IVA series of variable gain amplifiers is fabricated using HP's 10 GHz fT, 25 GHz fMAX ISOSATTM-I silicon bipolar process. This process uses nitride selfalignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide inter-metal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.
PIN 1
Typical Biasing Configuration and Functional Block Diagram
6-173
5965-9974E
Absolute Maximum Ratings
Parameter Device Voltage Power Dissipation[2,3] Input Power Vgc - Vee Junction Temperature Storage Temperature Absolute Maximum[1] 8V 600 mW +14 dBm 7V 200°C -65°C to 200°C Thermal Resistance:[2,4] jc = 50°C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 20 mW/°C for TC >170°C. 4. See MEASUREMENTS section "'Thermal Resistance" in Communications Components Catalog, for more information.
Electrical Specifications[1], TA = 25°C
Symbol GP GP f3dB GCR ISO VSWR NF P1dB IP3 tD ICC Parameters and Test Conditions[2]: VCC = 5 V, Vee = 0 V, Vgc = 0 V, ZO = 50 Power Gain |S21|[2] Gain Flatness 3 dB Bandwidth[3] Gain Control Range[4] Reverse Isolation (|S12|[2]) Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Compression Output Third Order Intercept Point Group Delay Supply Current f = 0.5 GHz, Vgc = 0 to 5 V f = 0.5 GHz, Vgc = 0 to 5 V f = 0.05 to 1.5 GHz, Vgc = 0 to 5 V f = 0.05 to 1.5 GHz, Vgc = 0 to 5 V f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz dB dBm dBm psec mA 25 f = 0.5 GHz f = 0.05 to 1.0 GHz Units dB dB GHz dB dB 1.0 25 Min. 20 Typ. Max. 26 ± 0.3 1.5 30 45 1.7:1 1.5:1 9 -2 8 400 35 45
Notes: 1. The recommended operating voltage range for this device is 4 to 6 V. Typical performance as a function of voltage is on the following page. 2. As measured using Input Pin 1 and Output Pin 6; with Output Pin 7 terminated into 50 ohms. 3. Referenced from 50 MHz Gain. 4. The recommended gain control range for these devices for dynamic control is 0 to 4.2 V. Operation at gain control settings above 4.2 V may result in gain increase rather than gain decrease.
6-174
IVA-05128 Typical Performance, TA = 25°C, VCC = 5 V, Vee = 0 V
(unless otherwise noted)
30 Vgc < 2.5 V 20 28 P1 dB (dBm) 2 30 0 P1 dB 40 45
10 G P (dB) 0 4.0 V 5.0 V 20 30 0.1 22 GP (dB) 3.7 V 26
24
6 GP 8 ICC
30
10
25
20 0.2 0.5 1.0 2.0 4.0 RF FREQUENCY (GHz)
10 3 4 5 VCC (V) 6 7
20
Figure 1. Typical Variable Gain vs. Frequency.
Figure 2. Power Gain and P1 dB at 0.5GHz and ICC vs. Bias Voltage with Vgc = 0 V.
45 30 5
30
1
20 28 P1 dB (dBm) GP (dB) 0 GP ICC ICC (mA) 35 40 P1 dB (dBm) 10
GP
4
26
1
0 P1 dB
2
24
2 P1 dB
30 10
1 Igc
22
3 55
25
+25
+85
25 +125
20 0 1 2 Vgc (V) 3 4 5
0
TEMPERATURE (C)
Figure 3. Power Gain and P1 dB at 0.5GHz and ICC vs. Case Temperature with Vgc = 0 V.
0 GP = 15 25 dB 5
Figure 4. Power Gain and P1 dB at 0.5GHz and Igc vs. Gain Control Voltage.
25
20 P1 dB (dBm) 10 GP = 5 dB 15
GP = 10 dB
NF (dB)
15
GP = 15 dB
10 20 GP = 5 dB 25 0.1 0.2 0.5 1.0 2.0 4.0 5 0.1 0.2 0.5 1.0 2.0 4.0 GP = 25 dB
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 5. P1 dB vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-175
Igc (mA)
3
ICC (mA)
4
35
Others parts begin by iv
IV-1
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