Details, datasheet, quote on part number: 2SA1194
Part2SA1194
CategoryDiscrete => Transistors => Bipolar => Audio Amplifier Application => PNP
DescriptionSilicon PNP Epitaxial
CompanyHitachi Semiconductor (acquired by Renesas)
DatasheetDownload 2SA1194 datasheet
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Features, Applications

Application

Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC * Junction temperature Storage temperature Note: 1. Value 25C Tj Tstg

Item Symbol Min 60 1000 Typ 0.7 0.8 Max 1 mA Unit V A Test conditions = 1 mA, RBE = VCB = 0 VEB = 0 VCE = 500 mA, 1 mA*1 Collector to emitter breakdown V(BR)CEO voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test I CBO I EBO hFE VCE(sat) VBE(sat) on t off

Maximum Collector Dissipation Curve 12 Collector power dissipation Pc (W) 3 iC (peak)

Typical Output Characteristics 0. DC Current Transfer Ratio vs. Collector Current 100,000 DC current transfer ratio hFE VCE 3 V Pulse 75C 25C

Saturation Voltage vs. Collector Current Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) 500 lB Pulse 3 Switching time t (s) = 25C VBE (sat) 3 1.0

Switching Time Test Circuit IC VIN R1 tr, tf 10ns VIN PW 10s duty ratio lB1 lB2 D.U.T. + VCC td ton 0 Input V 0 Output Response Waveform 10% 90% tstg 10% 90% toff


 

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