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Part: 2SA673AK
Category:
Discrete
-> Transistors
-> Bipolar
-> Audio Amplifier Application
-> PNP
Description: Silicon PNP Epitaxial
Company: Hitachi Semiconductor (acquired by Renesas)
Datasheet: Download 2SA673AK datasheet File size : 71 kB
Request For quote: Find where to buy 2SA673AK
Datasheet text preview:
2SA673A(K)
Silicon PNP Epitaxial
Application
· Low frequency amplifier · Medium speed switching
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
2SA673A(K)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 50 50 4 0.5 0.4 150 55 to +150 Unit V V V A W °C °C
2
2SA673A(K)
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 50 50 4 -- -- -- -- -- 60 10 -- -- -- -- Typ -- -- -- -- -- 0.64 0.2 0.87 -- -- 120 0.3 0.6 0.4 Max -- -- -- 0.5 0.5 -- 0.6 -- 320 -- -- -- -- -- MHz µs µs µs Unit V V V µA µA V V V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VEB = 3 V, IC = 0 VEB = 3 V, IC = 10 mA I C = 150 mA, IB = 15 mA*2 I C = 150 mA, IB = 15 mA*2 VCE = 3 V, IC = 10 mA VCE = 3 V, IC = 500 mA*2 VCE = 3 V, IC = 10 mA VCC = 10.3 V I C = 10 IB1 = 10 IB2 = 10 mA VCC = 5 V, I C = IB1 = IB2 = 20 mA
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Base to emitter voltage Collector to emitter saturation voltage Base to emitter saturation voltage DC current transfer ratio V(BR)EBO I CBO I EBO VBE VCE(sat) VBE(sat) hFE*1 hFE Gain bandwidth product Turn on time Turn off time Storage time fT t on t off t stg
Notes: 1. The 2SA673A(K) is grouped by hFE as follows. 2. Pulse test B 60 to 120 C 100 to 200 D 160 to 320
See 2SA673A except for the above mentioned characteristic curves.
3
2SA673A(K)
Switching Time Test Circuit ton, toff Test Circuit D.U.T. 6k 50 6V 6k 0.002 + 50 1k 0.002 + 50 10.3 V Unit R : Q C : µF 200 P.G. tr 5 ns PW 5 µs duty ratio 2% CRT Switching Time Test Circuit tstg Test Circuit D.U.T. 1.0 215 100 0.002 + 50 240 0.002 + 50 CRT
P.G. tr, tf 15 ns PW 5 µs duty ratio 10%
7 V
5 V Unit R : Q C : µF
Response Waveform 0 Input 13 V 0 Output 10% 90% 10% 90% ton toff
Response Waveform 9V Input 0 0 Output
10% 10% tstg
4
2SA673A(K)
Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.5 1.0 2 5 10 20 50 100 200 500 Collector Current IC (mA) IC = 10 IB
400
200
0
100 150 50 Ambient Temperature Ta (°C)
Base to Emitter Saturation Voltage VBE(sat) (V)
1.1 1.0 0.9 0.8 0.7 0.6 0.5
25 0 25 50 5°C =7 Ta
Collector Output Capacitance Cob (pF) Emitter Input Capacitance Cib (pF)
Base to Emitter Saturation Voltage vs. Collector Current
Input and Output Capacitance vs. voltage 70 60 50 40 30 20 10 0 0.1 Cob(IE = 0) Cib(IC = 0) f = 1 MHz
IC = 10 IB
0.4 0.1 0.2 0.5 1.0 2 5 10 20 50 100 200 500 Collector Current IC (mA)
0.3 1.0 3 10 Collector to Base Voltage VCB (V) Emitter to Base Voltage VEB (V)
30
5
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