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Part: 2SA743
Category:
Discrete
-> Transistors
-> Bipolar
-> Audio Amplifier Application
-> PNP
Description: Silicon PNP Epitaxial
Company: Hitachi Semiconductor (acquired by Renesas)
Datasheet: Download 2SA743 datasheet File size : 95 kB
Request For quote: Find where to buy 2SA743
Datasheet text preview:
2SA743, 2SA743A
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A
Outline
TO-126 MOD
1
1. Emitter 2. Collector 3. Base
2
3
Absolute Maximum Ratings (Ta = 25°C)
Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Symbol VCBO VCEO VEBO IC PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg
1
2SA743 50 50 4 1 0.75 8 150 55 to +150
2SA743A 80 80 4 1 0.75 8 150 55 to +150
Unit V V V A W °C °C
2SA743, 2SA743A
Electrical Characteristics (Ta = 25°C)
2SA743 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CER I CER DC current tarnsfer ratio hFE*1 hFE Base to emitter voltage VBE Collector to emitter saturation voltage VCE(sat) Min 50 50 4 -- -- 60 20 -- -- -- Typ -- -- -- -- -- 120 -- Max -- -- -- 20 -- 200 -- 2SA743A Min 80 80 4 -- -- 60 20 -- -- -- Typ -- -- -- -- -- 120 -- Max -- -- -- -- 20 200 -- V V MHz Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = I E = 1 mA, IC = 0 VCE = 50 V, RBE = 1 k VCE = 80 V, RBE = 1 k VCE = 4 V, IC = 50 mA VCE = 4 V, IC = 1 A (pulse) VCE = 4 V, IC = 50 mA I C = 1 A, IB = 0.1 A VCE = 4 V, IC = 30 mA
0.65 1.0 0.75 1.5 120 --
0.65 1.0 0.75 1.5 120 --
Gain bandwidth product f T Note: B 60 to 120
1. The 2SA743 and 2SA743A is grouped by hFE as follows. C 100 to 200
2
2SA743, 2SA743A
Maximum Collector Dissipation Curve 0.8 Collector power dissipation PC (W) Collector power dissipation PC (W) 0.75 W 0.6 8 Maximum Collector Dissipation Curve
6
0.4
4
0.2
2
0
50 100 150 Ambient temperature Ta (°C)
200
0
50 100 150 Case temperature TC (°C)
200
Typical Output Charactristics (1) 200
1 .6
4 1.
.2 1
Typical Output Characteristics (2) 1.0
Collector current IC (mA)
160
Collector currnet IC (A)
1.
0
TC = 25°C
0.8
8 24 6 2 20 1 2 1 10
8
TC = 25°C
0.8
120
0.6
0.6
6
4
0.4
80
0.4
0.2 mA
2 mA
0.2 IB = 0 0 1 2 3 4 5 Collector to emitter voltage VCE (V)
40
IB = 0 0 10 20 30 40 50 Collector to emitter voltage VCE (V)
3
2SA743, 2SA743A
DC Currnet Transfer Ratio vs. Collector Current 180 TC = 75°C DC current transfer ratio hFE VCE = 4 V Pulse
°C TC = 75
25 25
Typical Transfer Characteristics 1.0 0.5 Collector current IC (A) 0.2 0.1 0.05 0.02 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 Base to emitter voltage VBE (V)
VCE = 4 V Pulse
160 140 25 120 100 80 25
60 0.01 0.02 0.05 0.1 0.2 0.5 1.0 Collector current IC (A)
4
Unit: mm
8.0 ± 0.5
0°
12
01 3.1 +0..15
2.7 ± 0.4
12
120°
1.1 15.6 ± 0.5 0.8 2.29 ± 0.5 2.29 ± 0.5 0.55 1.2
3.7 ± 0.7 11.0 ± 0.5
0°
2.3 ± 0.3
Hitachi Code JEDEC EIAJ Weight (reference value)
TO-126 Mod -- -- 0.67 g
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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