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Part: 2SA743A

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> Audio Amplifier Application
         -> PNP

Description: Silicon PNP Epitaxial

Company: Hitachi Semiconductor (acquired by Renesas)

Datasheet: Download 2SA743A datasheet     File size : 95 kB

Request For quote: Find where to buy 2SA743A



Datasheet text preview:
2SA743, 2SA743A
Silicon PNP Epitaxial

Application
Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A

Outline
TO-126 MOD

1

1. Emitter 2. Collector 3. Base

2

3

Absolute Maximum Ratings (Ta = 25°C)
Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Symbol VCBO VCEO VEBO IC PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg
1

2SA743 ­50 ­50 ­4 ­1 0.75 8 150 ­55 to +150

2SA743A ­80 ­80 ­4 ­1 0.75 8 150 ­55 to +150

Unit V V V A W °C °C

2SA743, 2SA743A
Electrical Characteristics (Ta = 25°C)
2SA743 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CER I CER DC current tarnsfer ratio hFE*1 hFE Base to emitter voltage VBE Collector to emitter saturation voltage VCE(sat) Min ­50 ­50 ­4 -- -- 60 20 -- -- -- Typ -- -- -- -- -- 120 -- Max -- -- -- ­20 -- 200 -- 2SA743A Min ­80 ­80 ­4 -- -- 60 20 -- -- -- Typ -- -- -- -- -- 120 -- Max -- -- -- -- ­20 200 -- V V MHz Unit V V V µA Test conditions I C = ­1 mA, IE = 0 I C = ­10 mA, RBE = I E = ­1 mA, IC = 0 VCE = ­50 V, RBE = 1 k VCE = ­80 V, RBE = 1 k VCE = ­4 V, IC = ­50 mA VCE = ­4 V, IC = ­1 A (pulse) VCE = ­4 V, IC = ­50 mA I C = ­1 A, IB = ­0.1 A VCE = ­4 V, IC = ­30 mA

­0.65 ­1.0 ­0.75 ­1.5 120 --

­0.65 1.0 ­0.75 ­1.5 120 --

Gain bandwidth product f T Note: B 60 to 120

1. The 2SA743 and 2SA743A is grouped by hFE as follows. C 100 to 200

2

2SA743, 2SA743A
Maximum Collector Dissipation Curve 0.8 Collector power dissipation PC (W) Collector power dissipation PC (W) 0.75 W 0.6 8 Maximum Collector Dissipation Curve

6

0.4

4

0.2

2

0

50 100 150 Ambient temperature Ta (°C)

200

0

50 100 150 Case temperature TC (°C)

200

Typical Output Charactristics (1) ­200
­1 .6
4 ­1.
.2 ­1

Typical Output Characteristics (2) 1.0

Collector current IC (mA)

­160

Collector currnet IC (A)

­1.

0

TC = 25°C

0.8

8 24 6 ­2 ­ 20 ­1 2 ­ ­1 ­10
­8

TC = 25°C

­0.8
­120
­0.6

0.6

­6

­4
0.4

­80

­0.4
­0.2 mA

­2 mA
0.2 IB = 0 0 ­1 ­2 ­3 ­4 ­5 Collector to emitter voltage VCE (V)

­40

IB = 0 0 ­10 ­20 ­30 ­40 ­50 Collector to emitter voltage VCE (V)

3

2SA743, 2SA743A
DC Currnet Transfer Ratio vs. Collector Current 180 TC = 75°C DC current transfer ratio hFE VCE = ­4 V Pulse
°C TC = 75
25 ­25

Typical Transfer Characteristics ­1.0 ­0.5 Collector current IC (A) ­0.2 ­0.1 ­0.05 ­0.02 ­0.01 0 ­0.2 ­0.4 ­0.6 ­0.8 ­1.0 ­1.2 Base to emitter voltage VBE (V)

VCE = ­4 V Pulse

160 140 25 120 100 80 ­25

60 ­0.01 ­0.02 ­0.05 ­0.1 ­0.2 ­0.5 ­1.0 Collector current IC (A)

4

Unit: mm
8.0 ± 0.5

12
01 3.1 +0..15 ­

2.7 ± 0.4

12

120°

1.1 15.6 ± 0.5 0.8 2.29 ± 0.5 2.29 ± 0.5 0.55 1.2

3.7 ± 0.7 11.0 ± 0.5



2.3 ± 0.3

Hitachi Code JEDEC EIAJ Weight (reference value)

TO-126 Mod -- -- 0.67 g




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