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Part: 2SC4499L
Category:
Discrete
-> Transistors
-> Bipolar
-> Audio Amplifier Application
-> NPN
Description: Silicon NPN Triple Diffused
Company: Hitachi Semiconductor (acquired by Renesas)
Datasheet: Download 2SC4499L datasheet File size : 174 kB
Request For quote: Find where to buy 2SC4499L
Datasheet text preview:
2SC4499(L)/(S)
Silicon NPN Triple Diffused
Application
High speed and high voltage switching
Outline
DPAK
4 4
1
2
3 12
S Type
3
1. Base 2. Collector 3. Emitter 4. Collector
L Type
2SC4499(L)/(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg
1
Ratings 500 400 10 0.5 1.0 0.75 10 150 55 to +150
Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current Symbol VCEO(sus) V(BR)EBO I CBO I CEO DC current transfer ratio hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test. VCE(sat) VBE(sat) t on t stg tf Min 400 10 -- -- 12 5 -- -- -- -- -- Typ -- -- -- -- -- -- -- -- -- -- -- Max -- -- 20 50 -- -- 1.0 1.5 1.0 2.0 1.0 V V µs µs µs Unit V V µA Test conditions I C = 0.1 A, RBE = L = 100 mH I E = 10 mA, IC = 0 VCB = 400 V, IE = 0 VCE = 350 V, RBE = VCE = 5 V, IC = 0.25 A*1 VCE = 5 V, IC = 0.5 A*1 I C = 0.25 A, IB = 0.05 A*1 I C = 0.25 A, IB = 0.05 A*1 I C = 0.5 A, IB1 = IB2 = 0.1 A, VCC 150 V
2
2SC4499(L)/(S)
Maximum Collector Dissipation Curve 12 Collector power dissipation PC (W) 10 Area of Safe Operation
Collector current IC (A)
1.0
µs 25 µs ) s 50 ms 5°C 0µ =2 25 =1 (T C PW tio n era Op DC
8
0.1
4
0.01
Ta = 25°C, 1 Shot
0.001 0 50 100 Case temperature TC (°C) 150 1 3 10 30 100 300 1,000 Collector to emitter voltage VCE (V)
Transient Thermal Resistance Collector Current Derating Rate Thermal resistance j-c (°C/W) 100 Collector current derating rate (%) 10 3 1.0 0.3 0.1 0.03 0.01 0.01 0 50 100 Case temperature TC (°C) 150 0.01 TC = 25°C 0.1 0.1 Time t 1.0 1.0 10 (s) 10 (ms)
10 µ s1 0m
10 ms10 s
s
80
IS
/B
Lim
60
it A
re
a
40
20
3
2SC4499(L)/(S)
Collector to Emitter Voltage vs. Base to Emitter Resistance 600 Collector to emitter voltage VCER (V) IC = 1 mA
Reverse Bias Area of Safe Operation 1.0 350 V, 1 A
Collector current IC (A)
0.8
500
0.6 0.4
400 V, 0.5 A
400
0.2
IB2 = 0.1 A
450 V, 0.1 A
0
200 300 400 500 100 Collector to emitter voltage VCE (V)
300 100
10 k 100 k 1M 1k Base to emitter resistance RBE ()
Typical Output Characteristics 0.5 1.0
Typical Transfer Characteristics VCE = 5 V Ta = 25°C
Collector current IC (A)
0.3
Collector current IC (A) TC = 25°C
0.4
50 40 30
0.8
20
10
5 mA
0.6
0.2
0.4
0.1 IB = 0 0
0.2
1 2 3 4 5 Collector to emitter voltage VCE (V)
0
1.2 1.6 2.0 0.4 0.8 Base to emitter voltage VBE (V)
4
2SC4499(L)/(S)
DC Current Transfer Ratio vs. Collector Current 100 Collector to emitter saturation voltage VCE(sat) (V) DC current transfer ratio hFE 10 3 1.0 0.3 0.1 IC = 0.05 A 0.03 Ta = 25°C 0.01 0.001 0.003 0.01 0.03 0.1 0.3 1.0 Base current IB (A) 0.2 A 0.1 A Collector to Emitter Saturation Voltage vs. Base Current
30
10
3 VCE = 5 V Ta = 25°C 1 0.001 0.003 0.01 0.03 0.1 0.3 Collector current IC (A) 1.0
Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V)
Saturation Voltage vs. Collector Current 10 IC = 5 IB 3 Switching time t (µs) 1.0 0.3 0.1 0.03 VCE(sat) VBE(sat) 3 1.0 10
Switching Time vs. Collector Current tstg
tf 0.3 0.1 0.03 ton
Ta = 25°C 1.0
VCC = 150 V IC = 5 IB1 = 5 IB2 1.0
0.01 0.001 0.003 0.01 0.03 0.1 0.3 Collector current IC (A)
0.01 0.001 0.003 0.01 0.03 0.1 0.3 Collector current IC (A)
5
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