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Part: 2SD2122L
Category:
Discrete
-> Transistors
-> Bipolar
-> Audio Amplifier Application
-> NPN
Description: Silicon NPN Epitaxial
Company: Hitachi Semiconductor (acquired by Renesas)
Datasheet: Download 2SD2122L datasheet File size : 234 kB
Request For quote: Find where to buy 2SD2122L
Datasheet text preview:
2SD2122(L)/(S), 2SD2123(L)/(S)
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB1409(L)/(S)
Outline
DPAK
4 4
1
2
3 12
S Type
3
1. Base 2. Collector 3. Emitter 4. Collector
L Type
2SD2122(L)/(S), 2SD2123(L)/(S)
Absolute Maximum Ratings (Ta = 25°C)
Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg
1
2SD2122(L)/(S) 2SD2123(L)/(S) Unit 180 120 5 1.5 3 18 150 55 to +150 180 160 5 1.5 3 18 150 55 to +150 V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
2SD2122(L)/(S) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO
2
2SD2123(L)/(S) Min 180 160 5 -- 60 30 -- -- -- -- Typ -- -- -- -- -- -- -- -- 180 14 Max -- -- -- 10 200 -- 1 1.5 -- -- V V MHz pF Unit V V V µA A Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA*1 VCE = 5 V, IC = 500 mA*1 I C = 500 mA, I B = 50 mA*1 VCE = 5 V, IC = 150 mA*1 VCE = 5 V, IC = 150 mA*1 VCB = 10 V, IE = 0, f = 1 MHz
Min 180 120 5 -- 60 30 -- -- -- --
Typ -- -- -- -- -- -- -- -- 180 14
Max -- -- -- 10 200 -- 1 1.5 -- --
DC current transfer ratio hFE1* hFE2 Collector to emitter saturation voltage
VCE(sat)
Base to emitter voltage VBE Gain bandwidth product f T Collector output capacitance Cob
Notes: 1. Pulse test 2. The 2SD2122(L)/(S) and 2SD2123(L)/(S) are grouped by h FE1 as follows. B 60 to 120 C 100 to 200
2
2SD2122(L)/(S), 2SD2123(L)/(S)
Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) 10 3.0 1.0 0.3 0.1 0.03 0.01 0 50 100 Case temperature TC (°C) 150 3 2SD2122 10 30 100 300 Collector to emitter voltage VCE (V) 2SD2123 Area of Safe Operation
Collector current IC (A)
IC (max)
20
on ati er ) Op 25°C DC = (T C
10
Typical Output Characteristics 1.0 10 98 7 6 5 4 3 0.4 2 0.2 1 mA IB = 0 0 TC = 25°C
P
C
DC Current Transfer Ratio vs. Collector Current 1,000 DC current transfer ratio hFE VCE = 5 V Ta = 25°C 300
Collector current IC (A)
0.8
=
0.6
18
W
100
30
10 20 30 40 50 Collector to emitter voltage VCE (V)
10 0.03
0.1 0.3 1.0 Collector current IC (A)
3.0
3
2SD2122(L)/(S), 2SD2123(L)/(S)
Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) Saturation Voltage vs. Collector Current 1.0 Saturation Voltage vs. Collector Current 10
0.3
3.0
0.1
1.0
0.03 Ta = 25°C lC = 10 lB 0.01 0.03 0.1 0.3 1.0 Collector current IC (A) 3.0
0.3
Ta = 25°C lC = 10 lB
0.1 0.03
0.1 0.3 1.0 Collector current IC (A)
3.0
Typical Transfer Characteristics 2.0 Gain bandwidth product fT (MHz) 1,000
Gain Bandwidth Product vs. Collector Current
Collector current IC (A)
1.6
300
1.2
100
0.8
0.4 VCE = 5 V Ta = 25°C 0 0.4 0.8 1.2 1.6 Base to emitter voltage VBE (V) 2.0
30
VCE = 5 V Ta = 25°C 0.03 0.1 0.3 Collector current IC (A) 1.0
10 0.01
4
2SD2122(L)/(S), 2SD2123(L)/(S)
Collector Output Capacitance vs. Collector to Base Voltage Collector output capacitance Cob (pF) 100
30
10
3
f = 1 MHz IE = 0 Ta = 25°C 1 3 10 30 100 Collector to base voltage VCB (V)
1
5
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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