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Part: 2SJ530S
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N/P-Channel Combo
Description: Silicon P-channel MOSFET High Speed Power Switching
Company: Hitachi Semiconductor (acquired by Renesas)
Datasheet: Download 2SJ530S datasheet File size : 137 kB
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Datasheet text preview:
2SJ530(L),2SJ530(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-655B (Z) 3rd. Edition Jun 1998 Features
· Low on-resistance R DS(on) = 0.08 typ. · 4V gate drive devices. · High speed switching.
Outline
DPAK2
4 D
4
12 G
3
12 S
3
1. Gate 2. Drain 3. Source 4. Drain
2SJ530(L),2SJ530(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings 60 ±20 15 60 15
Unit V V A A A A mJ W °C °C
Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP
Note3 Note3 Note2
15 19 30 150 55 to +150
EAR
Pch Tch
Tstg
1. PW 10µs, duty cycle 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg 50
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body drain diode forward voltage Body drain diode reverse recovery time Note: 4. Pulse test Symbol V(BR)DSS V(BR)GSS I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Min 60 ±20 -- -- 1.0 -- -- 6.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.08 0.11 11 850 420 110 12 75 125 75 1.1 70 Max -- -- 10 ±10 2.0 0.10 0.16 -- -- -- -- -- -- -- -- -- -- Unit V V µA µA V S pF pF pF ns ns ns ns V ns I F = 15A, VGS = 0 I F = 15A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = 60 V, VGS = 0 VGS = ±16V, VDS = 0 I D = 1mA, VDS = 10V I D = 8A, VGS = 10V Note4 I D = 8A, VGS = 4V Note4 I D = 8A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz VGS = 10V, I D = 8A RL = 3.75
2
2SJ530(L),2SJ530(S)
Main Characteristics
Power vs. Temperature Derating 40
Pch (W) I D (A)
1000 300
Maximum Safe Operation Area
30
100 30 10 3 1 0.3 0.1
10 µs
0 µs m Op ms s er ( at ion 1 sh o (T Operation in c= t) 25 this area is limited by R DS(on)
DC
Channel Dissipation
Drain Current
PW
10
20
=
10
1
10
Ta = 25 °C
0
50
100
150 Tc (°C)
200
Case Temperature
0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V)
Typical Output Characteristics 20 10 V 6 V
I D (A)
Typical Transfer Characteristics 20 V DS = 10 V 1VMTF5FTU
4 V
(A) ID Drain Current
16
1VMTF5FTU 3.5 V
5 V
16
12
Drain Current
12
8
3 V VGS = 2.5 V
8 Tc = 75 °C 4 25 °C 25 °C 1 2 3 Gate to Source Voltage 4 5 V GS (V)
4
0
2 4 6 Drain to Source Voltage
8 10 V DS (V)
0
3
2SJ530(L),2SJ530(S)
Drain to Source Saturation Voltage vs. Gate to Source Voltage 4.0
Drain to Source Saturation Voltage V DS(on) (V) Drain to Source On State Resistance R DS(on) ( )
Static Drain to Source on State Resistance vs. Drain Current 1 0.5 0.2 VGS = 4 V 0.1 10 V
1VMTF5FTU
3.2
2.4
1.6
15 A 10 A 5 A
0.05
0.8
0.02 0.01
0.1 0.3 1 3
1VMTF5FTU
10 30 100
0
4
8
12
16 V GS (V)
20
Gate to Source Voltage
Drain Current
I D (A)
Static Drain to Source on State Resistance R DS(on) ( )
Forward Transfer Admittance |y fs | (S)
Static Drain to Source on State Resistance vs. Temperature 0.5 1VMTF5FTU 0.4 I D = 15 A 10 A 0.2 V GS = 4 V 15 A -5,10A 0 40 10 V 0 40 80 Tc 120 (°C) 160 5 A
100 30 10 3 1 0.3
Forward Transfer Admittance vs. Drain Current
Ta = 25 °C 25 °C 75 °C
0.3
0.1
0.1 0.1 0.3
V DS = 10 V 1VMTF5FTU 1 3 10 30 100
Case Temperature
Drain Current I D (A)
4
2SJ530(L),2SJ530(S)
BodyDrain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz
500
5000
Reverse Recovery Time trr (ns)
Capacitance C (pF)
200 100 50
1000 300 100 30
Ciss
Crss
20 10 5 0.1 di / dt = 50 A / µs VGS = 0, Ta = 25 °C 0.3 3 1 10 20 Reverse Drain Current I DR (A)
Coss
10 0 10 20 30 40 50 Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
Switching Characteristics
V DS (V)
20
4
Switching Time t (ns)
V DD = 10 V 25 V 50 V
V GS (V)
0
0 I D = 15 A
1000 300 100 30 10 3 1 0.1 V GS = 10 V, V DD = 30 V Pw = 5 µs, duty < 1 % t d(off) tf tr t d(on)
Drain to Source Voltage
40 V DS V DD = 50 V 25 V 10 V V GS
8
60
12
80 100 0
16 20 40
8
32 16 24 Gate Charge Qg (nc)
Gate to Source Voltage
0.3
1
3
10 20
Drain Current
I D (A)
5
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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