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Part: 2SK1541LS

Category:

Description:

Company: Hitachi Semiconductor (acquired by Renesas)

Datasheet: Download 2SK1541LS datasheet     File size : 335 kB

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Datasheet text preview:
2SK1540(L)(S), 2SK1541(L)(S)
Silicon N-Channel MOS FET

Application
High speed power switching

Features
· · · · · Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter

Outline

LDPAK 4 4

12 1 D G 2 3

3

S

1. Gate 2. Drain 3. Source 4. Drain

2SK1540(L)(S), 2SK1541(L)(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1540 2SK1541 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1

Symbol VDSS

Ratings 450 500 ±30 7 28 7 60 150 ­55 to +150

Unit V

V A A A W °C °C

2

2SK1540(L)(S), 2SK1541(L)(S)
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Symbol Min 2SK1540 V(BR)DSS 2SK1541 V(BR)GSS I GSS 450 500 ±30 -- -- -- -- -- -- ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 -- -- |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 4.0 -- -- -- -- -- -- -- -- -- -- 0.6 0.7 6.5 1050 280 40 15 55 95 40 0.95 320 3.0 0.8 0.9 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V ns I F = 7 A, VGS = 0 I F = 7 A, VGS = 0, diF/dt = 100 A/µs I D = 4 A, VGS = 10 V, RL = 7.5 I D = 4 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V I D = 1 mA, VDS = 10 V I D = 4 A, VGS = 10 V *1 Typ -- Max -- Unit V Test conditions I D = 10 mA, VGS = 0

Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current

2SK1540 I DSS 2SK1541

Gate to source cutoff voltage

Static Drain to source 2SK1540 RDS(on) on state resistance 2SK1541

Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test

See characteristic curves of 2SK1157, 2SK1158.

3

2SK1540(L)(S), 2SK1541(L)(S)
Power vs. Temperature Derating 60 Channel Dissipation Pch (W)

40

20

0

50 100 Case Temperature TC (°C)

150

4

Unit: mm

10.2 ± 0.3

(1.4)

4.44 ± 0.2 1.3 ± 0.2
+ 0.3 ­ 0.5

11.3 ± 0.5

8.6 ± 0.3

10.0

1.27 ± 0.2 0.2 0.86 + 0.1 ­ 0.76 ± 0.1 2.54 ± 0.5

11.0 ± 0.5

1.2 ± 0.2

2.59 ± 0.2

2.54 ± 0.5

0.4 ± 0.1

Hitachi Code JEDEC EIAJ Weight (reference value)

LDPAK (L) -- -- 1.4 g




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