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Part: 4AC12
Category:
Discrete
-> Transistors
-> Bipolar
-> Audio Amplifier Application
-> NPN
Description: Silicon NPN Epitaxial
Company: Hitachi Semiconductor (acquired by Renesas)
Datasheet: Download 4AC12 datasheet File size : 67 kB
Request For quote: Find where to buy 4AC12
Datasheet text preview:
4AC12
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
SP-10 3 2 4 ID ID 9 8 ID 1, 10 Emitter 2, 4, 6, 8 Base 3, 5, 7, 9 Collector ID 10 5
1
1
7
10
6
4AC12
Absolute Maximum Ratings (for each device, Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Diode current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) ID PC *
1 1
Ratings 27 27 7 2 4 2 4 28 150 55 to +150
Unit V V V A A A W °C °C
PC * (TC = 25°C) Junction temperature Storage temperature Note: 1. 4 devices operation. Tj Tstg
Electrical Characteristics (for each device, Ta = 25°C)
Item Symbol Min 27 28 7 -- -- 7000 2000 -- -- -- Typ -- -- -- -- -- -- -- -- -- -- Max -- 36 -- 10 10 30000 -- 1.5 2.0 3.5 V V V Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 1 A, L = 20 mH, RBE = I E = 5 mA, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, RBE = VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 2 A*1 I C = 2 A, IB = 2 mA*1 I C = 2 A, IB = 2 mA*1 ID = 2 A Collector to emitter breakdown V(BR)CBO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current VCEO(SUS) V(BR)EBO I CBO I CEO DC current transfer ratio hFE hFE Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward current Note: 1. Pulse test. VCE(sat) VBE(sat) VD
2
4AC12
Maximum Collector Dissipation Curve 6 Collector power dissipation PC (W) 4 device operation 30 Collector power dissipation PC (W) 3 device operation 4 2 device operation 1 device operation 2 4 device operation 3 device operation 20 2 device operation Maximum Collector Dissipation Curve
10
0
50 100 Ambient temperature Ta (°C)
150
1 device operation 0 50 100 Case temperature TC (°C) 150
Note: Collector power dissipation of each devices is identical.
Area of Safe Operation 10 iC(peak)
1m
Typical Output Characteristics
90
2.0 IC(max)
80
70
60 50
Collector current IC (A)
Collector current IC (A)
3.0 1.0 0.3 0.1 0.03
DC (T Op e C= 25 ratio °C n )
PW =
1.6
s
40
1.2
10
ms
0.8
30 µA
0.4 IB = 0 TC = 25°C 0 1 2 3 4 5 Collector to emitter voltage VCE (V)
Ta = 25°C 1 shot pulse 1.0 2 5 10 20 50 Collector to emitter voltage VCE (V)
0.01 0.5
3
4AC12
DC Current Transfer Ratio vs. Collector Current 100,000 DC current transfer ratio hFE 30,000 10,000 Collector to Emitter Saturatiion Voltage vs. Collector Current 10
Collector to emitter saturation voltage VCE(sat) (V)
T
3,000 1,000 300
7 a=
5°C
25°C
3
Ta = 25°C 25°C
75°C
1.0
25°C
0.3 IC = 1000 IB 0.1 0.03 0.1 0.3 1.0 Collector current IC (A) 3.0
VCE = 2 V 100 0.03 0.3 0.1 1.0 Collector current IC (A) 3.0
Base to Emitter Saturatiion Voltage vs. Collector Current Base to emitter saturation voltage VBE(sat) (V) 10 Ta = 25°C 25°C 2.0
Typical Transfer Characteristics
Collector current IC (A)
1.6
3.0
75°C
VCE = 2 V Ta = 75°C 25°C 25°C
1.2
1.0
0.8
0.3 IC = 1000 IB 0.1 0.03 0.3 0.1 1.0 Collector current IC (A) 3.0
0.4
0
1.2 1.6 2.0 0.4 0.8 Base to emitter voltage VBE (V)
4
4AC12
Transient Thermal Resistance Zener Voltage vs. Case Temperature Thermal resistance j-c (°C/W) 60 10
1 s 0m to 1 0s
Zener voltage VZ (V)
50
1.0
40
30
0.1
10
µ
s to
10
ms
20
IC = 1 mA
TC = 25°C 0.02 0.01 125 0.01 0.1 0.1 Time t 1.0 1.0 10 (s) 10 (ms)
10 0 25 50 75 100 Case temperature TC (°C)
26.5 ± 0.3 10.0 ± 0.3
4.0 ± 0.2
2.5
1 1.82 2.54 1.4 1.2
10 0.55
10.5 ± 0.5
1.5 ± 0.2
0.55 ± 0.1
1
2
3
4
5
6
7
8
9
10
Pin No. Electrode
1 E
2 B
3 C
4 B
5 C
6 B
7 C
8 B
9 C
10 E
Note: B: Base C: Collector E: Emitter
5
Others parts begin by 4a
4A-1
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