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Details, datasheet, quote on part number:4AC14
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| Part: | 4AC14 |
| Category: | Discrete => Transistors => Bipolar => Audio Amplifier Application => NPN |
| Description: | Silicon NPN Triple Diffused |
| Company: | Hitachi Semiconductor (acquired by Renesas) |
| Datasheet: | Download 4AC14 datasheet File size : 51 kB |
| Request For quote: | Find where to buy 4AC14
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Datasheet text preview:
4AC14
Silicon NPN Triple Diffused
Application
Low frequency power amplifier
Outline
SP-10 3 2 4 ID ID 9 8 ID 1, 10 Emitter 2, 4, 6, 8 Base 3, 5, 7, 9 Collector ID 10 5
1
1
7
10
6
4AC14
Absolute Maximum Ratings (for each device, Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Diode current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) ID PC *
1 1
Ratings 150 150 7 5 10 5 4 28 150 55 to +150
Unit V V V A A A W °C °C
PC * (TC = 25°C) Junction temperature Storage temperature Note: 1. 4 devices operation. Tj Tstg
Electrical Characteristics (for each device, Ta = 25°C)
Item Symbol Min 150 150 7 -- -- 1000 -- -- -- Typ -- -- -- -- -- -- -- -- -- Max -- -- -- 10 10 20000 1.5 2.0 3.5 V V V Unit V V V µA Test conditions I C = 0.1 mA, IE = 0 I C = 0.2 A, L = 20 mHz, RBE = I E = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 120 V, RBE = VCE = 3 V, IC = 3 A*1 I C = 3 A, IB = 6 mA*1 I C = 3 A, IB = 6 mA*1 ID = 5 A Collector to emitter breakdown V(BR)CBO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current VCEO(SUS) V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward current Note: 1. Pulse test. hFE VCE(sat) VBE(sat) VD
2
4AC14
Maximum Collector Dissipation Curve 6 Collector power dissipation Pc (W) 4 device operation Maximum Collector Dissipation Curve Collector power dissipation Pc (W) 3 device operation 4 2 device operation 1 device operation 2 30 4 device operation 3 device operation 20 2 device operation
10
0
50 100 Ambient temperature Ta (°C)
150
1 device operation 0 50 100 Case temperature TC (°C) 150
Note: Collector power dissipation of each devices is identical.
Area of Safe Operation 100 iC (peak) 10
PW
s s 1m 0m =1
Typical Output Characteristics 5 4.5 4 3.5 3 2.5
Collector current IC (A)
Collector current IC (A)
4
2
1.5
IC (max) 1.0
3
DC (T O C = pe 25 ratio °C n )
2 1 mA IB = 0 TC = 25°C 0 1 2 3 4 5 Collector to emitter voltage VCE (V)
0.1 Ta = 25°C 1 shot pulse 0.01 0.3 1.0 3.0 10 30 100 300 Collector to emitter voltage VCE (V)
1
3
4AC14
Collector to emitter saturation voltage VCE (sat) (V) DC Current Transfer Ratio vs. Collector Current 10,000 DC current transfer ratio hFE Collector to Emitter Saturation Voltage vs. Collector Current 10
1,000
5°C =7 Ta 5°C 2 °C 5 2
3.0 Ta = 25°C 1.0 25°C 75°C 0.3 lC = 500 lB 0.1 0.1 0.3 1.0 3.0 Collector current IC (A) 10
100
10 0.1
VCE = 3 V 0.3 1.0 3.0 Collector current IC (A) 10
Base to emitter saturation voltage VBE (sat) (V)
Base to Emitter Saturation Voltage vs. Collector Current 10 Ta = 25°C Collector current IC (A) 3.0 25°C 75°C 5
Typical Transfer Characteristics
Ta = 25°C 4 25°C 75°C 3
1.0
2
0.3 lC = 500 lB 0.1 0.1 0.3 1.0 3.0 Collector current IC (A) 10
1
VCE = 3 V
0
0.4 0.8 1.2 1.6 Base to emitter voltage VBE (V)
2.0
4
4AC14
Transient Thermal Resistance Thermal resistance j-c (°C/W) 10
10 m 1 s to 0s
Typical Characteristics of Emitter to Collector Diode 5
1.0
Diode current ID (A) TC = 25°C
4
0.1
10
µs
t
0 o1
ms
3
2
1 TC = 25°C 0 0.4 0.8 1.2 1.6 2.0 Emitter to collector diode forward voltage VECF (V)
0.02 0.01 0.01
0.1 0.1 Time t
1.0 1.0
10 (s) 10 (ms)
Unit: mm
26.5 ± 0.3 10.0 ± 0.3 4.0 ± 0.2
2.5
1 1.82 2.54 1.4 1.2
10 0.55
10.5 ± 0.5
1.5 ± 0.2
0.55 ± 0.1
1
2
3
4
5
6
7
8
9
10
Pin No. Electrode
1 E
2 B
3 C
4 B
5 C
6 B
7 C
8 B
9 C
10 E
Note: B: Base C: Collector E: Emitter
5
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