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Part: 4AK23
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: Silicon N-channel Power MOSFET Array
Company: Hitachi Semiconductor (acquired by Renesas)
Datasheet: Download 4AK23 datasheet File size : 67 kB
Request For quote: Find where to buy 4AK23
Datasheet text preview:
4AK23
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
· Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A · Low drive current · High speed switching · High density mounting · Suitable for H-bridged motor driver
Outline
SP-12TA
1 G
2 D
5 G
4 D
8 G
9 D
12 G
11 D
12
3
4
5
6
7
8
9
10 1112
S3
S6
S7
S 10
1, 5, 8, 12. Gate 2, 4, 9, 11. Drain 3, 6, 7, 10. Source
4AK23
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 µs, duty cycle 1% 2. 4 Devices operation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25°C)* Pch* Tch Tstg
2 2 1
Ratings 100 ±20 5 20 5 32 4 150 55 to +150
Unit V V A A A W W °C °C
2
4AK23
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 100 ±20 -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.2 0.25 5 525 205 60 5 30 180 65 1.0 170 Max -- -- ±10 250 2.0 0.25 0.35 -- -- -- -- -- -- -- -- -- -- Unit V V µA µA V S pF pF pF ns ns ns ns V µs I F = 5 A, VGS = 0 I F = 5 A, VGS = 0, dIF/dt = 50 A/µs Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 80 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 2.5 A VGS = 10 V*1 I D = 2.5 A VGS = 4 V*1 I D = 2.5 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz I D = 2.5 A VGS = 10 V RL = 12
Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on)
See characteristic curves of 2SK1300
3
4AK23
Maximum Channel Dissipation Curve 6 Channel Dissipation Pch (W) Channel Dissipation Pch (W) Condition : Channel Dissipation of each die is identical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation 48 Maximum Channel Dissipation Curve Condition : Channel Dissipation of each die is identical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation
4
32
2
16
0
50
100
150
0
50
100
150
Ambient Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area 50 20 Drain Current I D (A) 10 5 2 1 0.5 0.2 0.1 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100
n n) tio is (o ra rea DS pe a O his by R t in ited lim
10
µs
10
0 µs
PW = 10
1 m s
Drain to Source Voltage VDS (V)
DC O pe ra tio n
m s (1 Sh ot )
(T c = 25 °C )
4
Unit: mm
02 31.3 +0..3 24.4 ± 0.1 16.4 ± 0.3
5.0 ± 0.2 3.8 3.2 3.0 2.0 ± 0.1
3.2 10.0 ± 0.3 2.7 16.0 ± 0.3
2.54
1.4
0.85 ± 0.1
10.5 ± 0.5
2.2 ± 0.2
0.55
+0.1 0.06
1
2
3
4
5
6
7
8
9
10 11 12
Hitachi Code JEDEC EIAJ Weight (reference value)
SP-12TA -- -- 6.1 g
Others parts begin by 4a
4A-1
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