Digchip : Database on electronics components
Electronic components database
Search:                      In section:
Member, Distributor  
Log In
Email:
Password:

Details, datasheet, quote on part number:PF01410A
 
 
Part:PF01410A
Category:Analog & Mixed-Signal Processing => Amplifiers
Description:MOSFET Power Amplifier Module For GSM Handy Phone
Company:Hitachi Semiconductor (acquired by Renesas)
Datasheet:Download PF01410A datasheet   File size : 26 kB
Request For quote:  Find where to buy PF01410A
 



Datasheet text preview:
PF01410A
MOS FET Power Amplifier Module for GSM Handy Phone
ADE-208-424B (Z) Product Preview 3rd. Edition November 1997 Application
· For GSM class4 890 to 915 MHz
Features
· · · · 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ High speed switching : 1 µsec
Pin Arrangement
3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND
4
G
G
1
G
G
Absolute Maximum Ratings (Tc = 25°C)
Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10 3 4 50 ­30 to +100 ­30 to +100 4 Unit V A V mW °C °C W
PF01410A
Electrical Characteristics (Tc = 25°C)
Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Symbol f VAPC I DS T 2nd H.D. 3rd H.D. VSWR (in) Pout (1) Min 890 0.1 -- 38 -- -- -- 2.8 Typ -- -- -- 45 ­45 ­45 1.5 3.3 Max 915 2.5 100 -- ­35 ­35 3.0 -- Unit MHz V µA % dBc dBc -- W Pin = +8 dBm, V DD = 4.8 V, VAPC = 2.5 V, RL = Rg = 50, Tc = 25°C Pin = +8 dBm, V DD = 4 V, VAPC = 2.5 V, RL = Rg = 50, Tc = 85°C Pin = +12.5 dBm, VDD = 4.8 V, VAPC = 0.1 V, RL = Rg = 50, Tc = 25°C Pin = +8 dBm, V DD = 4.8 V, RL = Rg = 50, Tc = 25°C Time from Pout = ­10 to +34.5 dBm Pin = +8 dBm, V DD = 7 V, Pout 2.8 W (At APC controlled), Rg = 50 , Tc = 25°C, Output VSWR = 8 : 1 All phases Test Condition -- -- VDD = 10 V, VAPC = 0 V Pin = +8 dBm, V DD = 4.8 V, Pout = 2.8 W (At APC controlled) RL = Rg = 50, Tc = 25°C
Output power (2)
Pout (2)
1.5
1.8
--
W
Isolation
--
--
­35
­20
dBm
Switching time
t r, t f
--
1
2
µs
Stability
--
No parasitic oscillation
--
2
PF01410A
Package Dimensions
Unit: mm 1.8 ± 0.2
4 8.0 ± 0.3 7.8 ± 0.3
G
3
1
G (Upper side)
2 G 3
8.0 ± 0.3
4 12.3 ± 0.3 9.6 ± 0.2 1 3.7 G G 2 2.1
1
G
2
4
G
G
3
1.8 1.3 1.8 1.6 1.8 1.3 1.8 (Bottom side) Remark: Coplanarity of bottom side of terminals are less than 0 ± 0.1mm.
Hitachi Code JEDEC EIAJ Weight (reference value) RF-K1
2.1 0.6
3.7
3