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Details, datasheet, quote on part number:74VHC14A
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Datasheet text preview:
74VHCT14A
HEX SCHMITT INVERTER
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HIGH SPEED: tPD = 5.5 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C TYPICAL HYSTERESIS : 0.7V at VCC = 4.5V POWER DO WN PROTECTION ON INPUTS & OUTPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MI N) BALANCED PROPAGATION DELAYS: tPLH tPHL OPERATING VOLTAGE RANGE: VCC(O PR) = 4.5V to 5.5V PIN AND FUN CTION COMPATIBLE WITH 74 SERIES 14 IMPROVED LATCH-UP IMMUNI TY LOW NOISE: VOLP = 0.8V (MAX.)
S OP
TSSO P
ORDER CODES
PACKAGE SOP T SSOP TUBE 74VHCT14AM T&R 74VHCT14AMT R 74VHCT14ATTR
DESCRIPTION T he 74VHCT14A is an advanced high-speed CMO S HEX SCHMITT INVERTER fabricated with sub-micron s ilicon gate and double-layer metal wiring C2MOS technology. T he internal circuit i s composed of 3 s tages including buffer output, which provides high noise immunity and stable output. Power down protection is provided on all inputs and outputs and 0 t o 7V can be accepted on PIN CONNECTION AND IEC LOGIC SYMBOLS
inputs with no regard to the supply voltage. This device can be used t o interface 5V to 3V since all inputs are equipped with TTL threshold. Pin configuration and function are the same as those of the 74VHC04 but the 74VHC14 has hysteresis. This to gether with its schmitt trigger f unction allows it to be used on line receivers with slow rise/fall input signals. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.
J une 2001
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74VHCT14A
I NPUT EQ UIVALENT CIRCUIT PIN DESCRIPTION
PIN N o 1, 3, 5, 9, 11, 13 2, 4, 6, 8, 10, 12 7 14 SYM BOL 1A to 6A 1Y to 6Y G ND VCC NAME A ND FUNCTION Data In puts Data O utput s Ground (0V) Positive Supply Voltage
TRUTH TABLE
A L H Y H L
AB SOLUTE MAXIMUM RATINGS
Symbol V CC VI VO VO IIK IOK IO Tstg TL Supply Voltage DC Input Voltage DC Output Voltage (se e note 1) DC Output Voltage (se e note 2) DC Input Diode Current DC Output Diode Current DC Output Current Stora ge Temperature Lead Temperature (10 sec) Pa rameter Value -0.5 to + 7.0 -0.5 to + 7.0 -0.5 to + 7.0 -0.5 to VCC + 0.5 - 20 ± 20 ± 25 ± 50 -65 to +1 50 300 Unit V V V V mA mA mA mA °C °C
ICC or IGND DC VCC or Gr ound Current
A bsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied 1) VCC = 0V 2) High or Low State
RECOMMENDED OPERATING CONDITIONS
Symbol V CC VI VO VO Top Supply Voltage Input Voltage Outpu t Voltage (see n ote 1 ) Outpu t Voltage (see n ote 2 ) Operat ing Temperature Pa rameter Value 4.5 to 5.5 0 to 5.5 0 to 5.5 0 to VCC -55 to 125 Unit V V V V °C
1) VCC = 0V 2) High or Low State
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74VHCT14A
DC SPECIFICATIONS
Test C ondition Symbo l P arameter VCC (V) 4.5 5.5 4.5 5.5 4.5 5.5 4.5 4.5 4.5 4.5 0 to 5.5 5.5 5.5 0 IO=-50 µA IO= -8 mA IO=50 µA IO= 8 mA VI = 5.5V or GND VI = VCC or GN D One Inp ut at 3.4V, other input at VCC or GND VOUT = 5.5V TA = 25°C Min. 2.0
2.0
Value -40 to 85°C Min. 2.0
2.0
-55 to 125° C Mi n. 2. 0
2.0
U nit
Typ.
Max.
Max.
M ax. V 0.6 0.6 V V V 0.1 0. 55 ± 1.0 20 1.5 5.0 V µA µA mA µA
Vt+ VtVh VOH VOL II ICC ICC
High Level Threshold Voltage Low Level Threshold Voltage Hysteres is Voltage High Level Ou tput Voltage Low Level Ou tput Voltage Input Leakage Current Quiescent Su pply Current Additional Worst Case Supply Current Output Leakage Current
0.6 0.6 0.4 0.4 4.4 3.94 0.0 0.1 0.36 ± 0.1 2 1.35 0.5 4.5 1.4 1.5 0.4 0.4 4.4 3.8
0.6 0.6 1.4 1.5 0. 4 0. 4 4. 4 3. 7 0.1 0.4 4 ± 1.0 20 1.5 5. 0
1.4 1.5
IOPD
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3ns)
Test C ondition Symbo l P arameter VCC (* ) C L (p F) (V ) 5 .0 5 .0 15 50 TA = 25°C Min. Typ. 5.5 6.7 Max. 8.6 9.0 Value -40 to 85°C Min. 1.0 1.0 Max. 10. 0 11.0 -55 to 125° C Mi n. 1. 0 1. 0 M ax. 10.0 11.0 ns U nit
tPLH tPHL
Propagation D elay Time
( *) Volt age range is 5.0V ± 0.5V
CA PACITIVE CHARACTERISTICS
Test C ondition Symbo l P arameter Min. CIN C PD Input Capacitance Power Dissipation Capacitance (note 1) TA = 25°C Typ. 6 16 Max. 10 Value -40 to 85°C Min. Max. 10 -55 to 125° C Mi n. M ax. 10 pF pF U nit
1) CPD is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without lo ad. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/ 6 (per gate)
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74VHCT14A
DYNAMIC SWITCHING CHARACTERISTICS
Test C ondition Symbo l P arameter VCC (V) TA = 25°C Min. Typ. 0.3 5.0 -0.8 C L = 50 pF 2.0 -0.3 V Max. 0.8 Value -40 to 85°C Min. Max. -55 to 125° C Mi n. M ax. U nit
VOLP V OLV V IHD
VILD
Dynamic Low Voltage Quiet Output (note 1, 2) Dynamic High Voltage Input (note 1, 3) Dynamic Low Voltage Input (note 1, 3)
5.0
5.0
0.6
1) Worst c ase package. 2) Max number of outputs defined as (n). Data inputs ar e dr iven 0V to 3.0V, (n-1) outputs switchin g and one output at G ND. 3) Max number of data inputs (n) switching. (n-1) switc hing 0V to 3.0V. Inputs under test switching: 3.0V to threshold (VILD), 0V to threshold ( VIHD), f=1M Hz.
T EST CIRCUIT
C L =15/50pF or equivalent (includes jig and pr obe capacitance) R T = ZOUT of pulse generator (t ypically 50)
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74VHCT14A
WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
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