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Details, datasheet, quote on part number:DB96090W
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Datasheet text preview:
DB-960-90W
RF POWER AMPLIFIER using 2 x PD57060 S The LdmosST FAMILY
PR ELIM INARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs · EXCELLENT THERMAL STABILITY · COMMON SOURCE CONFIGURATION · POUT = 90 W min. with 13 dB gain over 925-960 MHz · 10:1 LOAD VSWR CAPABILITY · BeO FREE AMPLIFIER.
DESCRIPTION The DB-960-90W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for GSM/GPRS/EDGE base station applications. The DB-960-90W is designed in cooperation with Europeenne de Telecomunications S.A. (www.etsa.rf), for high gain and broadband performance operating in common source m ode at 26 V, capable of withstanding l oad mismatch up to 10:1 all phases and with harmonics lower than 30 dBc.
OR DER CODE DB -960-90W
MECHANICAL SPECIFICATION L=80 mm W=50 mm H=10 mm
ABSOLUTE MAXIMUM RATINGS (TCASE = 25oC)
Symbol V DD ID P DISS TCA SE Pamb S upply voltage D rain Current P ower Diss. at Tcase = +85°C O perating C ase Temperature M ax. A mbient Temperature Parameter Value 32 12 145 -20 to + 85 +55 Unit V A W
oC o
C
January, 28 2002
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ELECTRICAL SPECIFICATION (Tamb = +25oC, Vdd = 26V, Idq = 2 x 200 mA)
Sy mbo l F REQ. G ain P1dB Fla tness Fla tness N D at P1dB IRTL Harmonic VSW R Sp urious I MD3 Frequency Range POUT = 90 W Over frequency range: 925 - 960 MH z Over frequency range and @ POUT = 90 W POUT from 0.1W to 90 W P1dB Input retu rn Loss POUT from 0.1W to 90 W POUT = 90 W Load Mismatch all phases @ P OUT = 90 W 10:1 VSW R all phases and POUT from 0.1 to 90 W POUT = 90 W PEP 10:1 -7 6 -2 5 dB c dB c 40 45 -20 -1 5 -3 0 Test Conditio ns Min. 925 12 90 13 100 +/- 0.5 1 Typ. Ma x. 960 Un it MH z dB W dB dB % dB dB c
TYPICAL PERFORMANCE Output Power vs. Input Power
Pout ( W )
120
Power Gain vs. Frequency (Pout = 90W)
Gp (dB)
15
940 MHz
100
14
960 MHz 925 MHz
80
13
60 12 40
20
Vdd = 26 V Idq= 2 x 200 mA
11
Vdd = 26 V Idq = 2 x 200 mA
0 0 2 4 6 8
10 910 920 930 940 950 960 970
Pin (W )
F (MHz)
Output Power and Efficiency vs. Frequency
P1dB (W )
120
Nd (%)
80
100
P1dB
70
80
60
60
Eff.
50
40
Vdd = 26 V Idq = 2 x 200 mA
40
20 910 920 930 940 950 960 970
30
F (MHz)
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TEST FIXTURE COM PONENT LAYOUT
CV1
CV2
Ref. ETSA c07/2000 - Ed1
TEST CIRCU IT PHOTOMASTER
Ref. ETSA c07/2000 - Ed1
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TEST CIRCU IT CO MPONENT PART LIST
COM PON ENT T 1, T2 C 1, C2, C23, C24 C 3, C4 C 5, C6, C17, C18 C 7, C8, C9, C10, C11, C13 C 12, C 14 C 15, C 16 C 19, C 20 C 21, C 22, C 26, C 27 C 25 C V1, CV 2 P 1, P 2 R 1,R7 R2 R 3, R4 R 5, R6 D 1, D2 S M1, S M2 B OARD S UBST RATE B ACK S IDE C ERAMI C CHIP C APACITORS D ESC RIPTI ON PD 57060S TRANS ISTOR 47pF - 500V CERAMIC CHIP CAPACITOR 3. 3pF - 500V CERAMIC CHIP CAPACITOR 100pF - 500V CERAMIC CHIP CAPACITOR 10pF - 500V CERAMIC CHIP CAPACITOR 6. 8pF - 500V CERAMIC CHIP CAPACITOR 100nF - 63V CERAMI C CHIP CAPACITOR 1µF / 35V ELE CTRO LYTIC CA PACITOR 3. 3pF - 500V CERAMIC CHIP CAPACITOR 0. 5pF - 500V CERAMIC CHIP CAPACITOR AD JUSTABLE C APACITOR 0.6 - 4.5pF / 500V 10K Oh ms M ULTITUR N POT ENTIOME TER 100 Oh ms 1/ 4W 1206 SMD C HIP R ESIS TOR 50 Ohm s 30W - 4GHz LOAD 4. 7K Ohms 1/ 4W 1206 SMD CHIP RESI STOR 10K Oh ms 1/4W 1206 SMD CHIP RESI STOR ZE NER DIOD E 5V - 500 mW SOD8 0 90° S MD H YBRI D CO UPLER ANAREN Xinger 1304-3 M ETCLAD MX3-30-C1/10C T HK 0.762 m m Cu 35µ TE FLON-GLA SS E r = 2.55 CO PPE R FL ANGE 2 mm THI CKNESS ATC100B or EQ UIVALENT
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Info rmation furnished is believed to be accurate and reli able. However, STMicroelectro nics assumes no responsibility for t he consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implic ation or otherwise under any patent or patent rights of STM icroelectronics. Sp ecifications mentioned in this publication are subject to change wi thout notice. This publication supersedes and replaces all informatio n previously supplied. STMi croelectronics products are not authorized for use as critical components in lif e support devices or systems without express w ritten approval of STMicro electronics. The ST logo is registered trademark of STMic roelectronics ® 2001 STMicroe lectronics - All Right s Reserved All other names are the property of their respective owners. S TMicroelectr onics GROUP OF COMPAN IES Australia - Brazil - China - Finland - F rance - Ger many - Hong Kong - India - Italy - Japan - Malaysia - M alta - Morocco Singapore - Spain - Sw eden - Switzerla nd - U nited King dom - U.S.A . http://w ww.st.com
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