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Details, datasheet, quote on part number:P40NF10L
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Datasheet text preview:
STP40NF10L
N-CHANNEL 100V - 0.028 - 40A TO-220 LOW GATE CHARGE STripFETTM POWER MOSFET
TYPE STP40NF10L
s s s s
VDSS 100 V
RDS(on) < 0.033
ID 40 A
TYPICAL RDS(on ) = 0.028 EXC EPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION TO-220
3 1 2
DESCRIPTION This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary sw itch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. APPLICATIONS s HIGH-E FF ICIE NCY DC-DC CONVERTERS s UP S AND MOTOR CONTROL s A UTO MO TI V E
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS V DG R VGS ID ID IDM (l) PTOT EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 1 00 1 00 ± 17 40 25 160 1 50 1 430 65 to 175 175
(1) Starting T j = 25°C, I D = 20A, VDD = 40V
Unit V V V A A A W W/°C mJ °C °C
(q) Pulse width limited by safe operating area
June 2002
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STP40NF10L
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1 62.5 300 °C/W °C/W °C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 17V Min. 100 1 10 ±100 Typ. Max. Unit V µA µA nA
ON (1)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID = 20 A VGS = 5V, ID = 20 A Min. 1 Typ. 1.7 0.028 0.030 Max. 2.5 0.033 0.036 Unit V
DYN AMIC
Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15V, ID = 20 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 25 2300 290 125 Max. Unit S pF pF pF
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STP40NF10L
ELECTRICAL CHARACTERISTICS (CONTINUED) SW ITCHIN G ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 50 V, ID = 20 A RG = 4.7 VGS = 4.5V (see test circuit, Figure 3) VDD = 80V, ID =40A,VGS = 5V Min. Typ. 25 82 46 12 22 64 Max. Unit ns ns nC nC nC
SW ITCHIN G OFF
Symbol td(off) tf td(off) tf tc Parameter Turn-off-Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 50 V, ID = 20 A, RG = 4.7, VGS = 4.5V (see test circuit, Figure 3) Vclamp =80V, ID = 40 A RG = 4.7, VGS = 4.5V (see test circuit, Figure 3) Min. Typ. 64 24 51 29 53 Max. Unit ns ns ns ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 40 A, VGS = 0 ISD = 40 A, di/dt = 100A/µs, VDD = 30V, Tj = 150°C (see test circuit, Figure 5) 110 467 8 Test Conditions Min. Typ. Max. 40 160 1.3 Unit A A V ns nC A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
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