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Part: BAT15-S

Category:
 Discrete
   -> Diodes & Rectifiers
     -> Schottky Barrier Rectifiers

Description: Hirel Silicon Schottky Diode ( Hirel Discrete And Microwave Semiconductor Medium Barrier Diodes For Detector And Mixer Applications )

Company: Siemens (acquired by Infineon Technologies Corporation)

Datasheet: Download BAT15-S datasheet     File size : 82 kB

Request For quote: Find where to buy BAT15-S



Datasheet text preview:
HiRel Silicon Schottky Diode
Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Medium barrier diodes for detector and mixer applications ¥ Hermetically sealed microwave package ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5106/014 ESD: Electrostatic discharge sensitive device, observe handling precautions! T

BAT 15

T1
Type BAT 15-013 (ql) Marking Ordering Code see below Pin Configuration Package T

BAT 15-014 (ql) BAT 15-033 (ql) BAT 15-034 (ql) BAT 15-043 (ql) BAT 15-044 (ql) BAT 15-063 (ql) BAT 15-064 (ql) BAT 15-073 (ql) BAT 15-074 (ql) BAT 15-093 (ql) BAT 15-094 (ql) BAT 15-103 (ql) BAT 15-104 (ql) BAT 15-113 (ql) BAT 15-114 (ql) BAT 15-123 (ql) BAT 15-124 (ql) (ql) Quality Level:

-

see below see below see below see below see below see below see below see below see below see below see below see below see below see below see below see below see below

see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 Ordering Code: Q62702A1178 Ordering Code: on request Ordering Code: on request Ordering Code: Q62702A1180

T1 T T1 T T1 T T1 T T1 T T1 T T1 T T1 T T1

P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, (see Chapter Order Instructions for ordering example)

Semiconductor Group

1

Draft A03 1998-04-01

BAT 15

Table 1 Parameter

Maximum Ratings Symbol Limit Values 3 100 100 50 50 50 Unit V mA

Reverse voltage Forward current BAT15-013, -014, -033, -034 BAT15-043, -044, -063, -064 BAT15-073, -074, -093, -094 BAT15-103, -104, -113, -114 BAT15-123, -124 Power dissipation BAT15-013, -014, -033, -034 BAT15-043, -044, -063, -064 BAT15-073, -074, -093, -094 BAT15-103, -104, -113, -114 BAT15-123, -124 Operating temperature range Storage temperature range Soldering temperature Burn-out energy 1) BAT15-013, -014, -033, -034 BAT15-043, -044, -063, -064 BAT15-073, -074, -093, -094 BAT15-103, -104, -113, -114 BAT15-123, -124
1)

VR IF

Ptot
100 100 50 50 50

mW

Top Tstg Tsol EB

- 55 to + 150 - 65 to + 175 + 220 5.0 5.0 2.0 2.0 1.0

°C °C °C Erg

Quoted for a single discharge of torry line during the first 2.4 ns current flow in the forward direction. General criterion for burn-out energy is a 3 dB increase in noise figure.

Semiconductor Group

2

Draft A03 1998-04-01

BAT 15

Electrical Characteristics Table 2 Parameter Breakdown voltage IR = 10 mA Reverse current DC Characteristics at TA = 25 °C unless otherwise specified Symbol min. Limit Values typ. max. V mA 5 5 5 1 1 V 0.15 0.17 0.18 0.19 0.20 V 0.23 0.27 0.29 0.30 0.31 0.28 0.30 0.31 0.32 0.33 3 Unit

V(BR) IR

VR = 2 V
BAT15-013, -014, -033, -034 BAT15-043, -044, -063, -064 BAT15-073, -074, -093, -094 BAT15-103, -104, -113, -114 BAT15-123, -124 Forward voltage 1 IF1 = 0.01 mA BAT15-013, -014, -033, -034 BAT15-043, -044, -063, -064 BAT15-073, -074, -093, -094 BAT15-103, -104, -113, -114 BAT15-123, -124 Forward voltage 2 IF2 = 1 mA BAT15-013, -014, -033, -034 BAT15-043, -044, -063, -064 BAT15-073, -074, -093, -094 BAT15-103, -104, -113, -114 BAT15-123, -124

VF1

VF2

Semiconductor Group

3

Draft A03 1998-04-01

BAT 15

Table 2 Parameter

DC Characteristics at TA = 25 °C unless otherwise specified (contÕd) Symbol min.
2)

Limit Values typ. max.

Unit W

Series resistance IF1 = 10 mA, IF2 = 50 mA BAT15-013, -014 BAT15-033, -034 BAT15-043, -044 BAT15-063, -064 BAT15-073, -074 BAT15-093, -094 BAT15-103, -104 BAT15-113, -114 BAT15-123, -124
2)

RF
3.0 4.0 3.5 4.5 4.5 5.5 6.0 7.0 8.0 3.5 4.5 4.0 5.0 5.5 6.5 7.0 8.0 9.0

DV F R F = --------------------Ð--- W 3 40 ´ 10

Semiconductor Group

4

Draft A03 1998-04-01

BAT 15

Table 3 Parameter

AC Characteristics at TA = 25 °C unless otherwise specified Symbol min. Limit Values typ. max. pF NF 0.35 0.30 0.27 0.23 0.20 0.60 0.35 0.30 0.25 0.22 dB Unit

Total capacitance VR = 0 V, f = 1 MHz BAT15-013, -014, -033, -034 BAT15-043, -044, -063, -064 BAT15-073, -074, -093, -094 BAT15-103, -104, -113, -114 BAT15-123, -124 Noise figure I.F. = 30 MHz LO power = 0 dBm LO = 9.375 GHz BAT15-013, -014 BAT15-033, -034 BAT15-043, -044 BAT15-063, -064 BAT15-073, -074 BAT15-093, -094 BAT15-103, -104 BAT15-113, -114 BAT15-123, -124

CT

-

5.3 6.3 5.3 6.3 5.3 6.3 5.7 7.2 8.0

5.5 6.5 5.5 6.5 5.5 6.5 6.0 7.5 9.0

Semiconductor Group

5

Draft A03 1998-04-01




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