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Part: BAT17
Category:
Discrete
-> Diodes & Rectifiers
-> Schottky Barrier Rectifiers
Description: Silicon Schottky Diode ( For Mixer Applications in The VHF/uhf Range For High-speed Switching )
Company: Siemens (acquired by Infineon Technologies Corporation)
Datasheet: Download BAT17 datasheet File size : 82 kB
Request For quote: Find where to buy BAT17
Datasheet text preview:
Silicon Schottky Diode
q q
BAT 17...
For mixer applications in the VHF/UHF range For high-speed switching
Type
Ordering Code (tape and reel) Q62702-A504 Q62702-A775 Q62702-A776 Q62702-A777
Pin Configuration Marking 1 2 3 A A A C C A C C C/A C/C A/A 53 54 55 56
Package
BAT 17 BAT 17-04 BAT 17-05 BAT 17-06
SOT-23
Maximum Ratings Parameter Reverse voltage Forward current Total power dissipation TS 60 °C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-ambient1) Junction-soldering point Symbol Values 4 130 150 150 55 ... + 150 55 ... + 150 Unit V mA mW °C °C °C
VR IF Ptot Tj Top Tstg
Rth JA Rth JS
750 590
K/W K/W
1) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm2 Cu. Semiconductor Group 1 03.96
BAT 17...
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. DC Characteristics Breakdown voltage IR = 10 µA Reverse current VR = 3 V VR = 3 V, TA = 60 °C VR = 4 V Forward voltage IF = 0.1 mA IF = 1 mA IF = 10 mA Diode capacitance VR = 0 V f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz Value typ. max. Unit
V(BR)
4 275 340 425 0.55 8
V µA 0.25 1.25 10 mV 200 250 350 350 450 600 pF 0.4 0.75 15
IR
VF
CT rS
Semiconductor Group
2
BAT 17...
Forward current IF = f (VF)
Reverse current IR = f (VR)
Diode capacitance CT = f (VR) f = 1 MHz
Differential forward resistance RF = f (IF) f = 10 kHz
Semiconductor Group
3
BAT 17...
Forward current IF = f (TA; TS*) *Package mounted on aluminum
Semiconductor Group
4
Others parts begin by ba
BA-1 BA-2 BA-3 BA-4 BA-5 BA-6 BA-7 BA-8 BA-9 BA-10 BA-11 BA-12 BA-13 BA-14 BA-15 BA-16 BA-17 BA-18
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