Details, datasheet, quote on part number: BAW78A-BAW79D
PartBAW78A-BAW79D
CategoryDiscrete => Diodes & Rectifiers => Switching Diodes
DescriptionSilicon Switching Diodes ( For High-speed Switching High Breakdown Voltage Common Cathode )
CompanySiemens (acquired by Infineon Technologies Corporation)
DatasheetDownload BAW78A-BAW79D datasheet
  

 

Features, Applications

q For high-speed switching q High breakdown voltage q Common cathode

Maximum Ratings per Diode Parameter Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current 1 s Total power dissipation 115 C Junction temperature Symbol BAW VR VRM IF IFM IFS Ptot Tj 50 Values BAW C 200 Unit BAW A V

Storage temperature range Tstg Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS

For detailed information see chapter Package Outlines. Package mounted on epoxy pcb mm/6 cm2 Cu.

Electrical Characteristics per Diode = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) 100 A BAW 79 A BAW 79 B BAW 79 C BAW 79 D Forward 2 A Reverse current VR = VRmax VR = VRmax, C AC characteristics Diode capacitance = 1 MHz Reverse recovery time = 200 mA, = 200 mA, = 100 measured 20 mA Test circuit for reverse recovery time CD trr pF

Forward current = f (TA*; TS) * Package mounted on epoxy

 

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