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Part: BB641
Category:
Discrete
-> Diodes & Rectifiers
Description: Silicon Variable Capacitance Diode ( For VHF Hyperband Tv/tr Tuners High Capacitance Ratio Low Series Resistance )
Company: Siemens (acquired by Infineon Technologies Corporation)
Datasheet: Download BB641 datasheet File size : 142 kB
Request For quote: Find where to buy BB641
Datasheet text preview:
Silicon Variable Capacitance Diode
BB 641
q q q
For VHF Hyperband TV/TR tuners High capacitance ratio Low series resistance
1
2
Type
Ordering Code (tape and reel) Q62702-B792
Pin Configuration Marking 1 2 C A red G
Package
BB 641
SOD-323
Maximum Ratings Parameter Reverse voltage Reverse voltage (R 5 k) Forward current Operating temperature range Storage temperature range Thermal Resistance Junction-ambient Symbol Values 30 35 20 55 ... + 150 55 ... + 150 Unit V V mA °C °C
VR VRM IF Top Tstg
Rth JA
450
K/W
Semiconductor Group
1
05 95
BB 641
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. DC Characteristics Reverse current V R = 30 V VR = 30 V, TA = 85 °C Diode capacitance VR = 1 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio VR = 1 V, 28 V, f = 1 MHz Capacitance matching VR = 1 V ... 28 V, f = 1 MHz Series resistance CT = 30 pF, f = 100 MHz Series inductance Value typ. max. Unit
IR
69 2.88 24 1.55 1.8 20 200
nA
CT
62 2.65 76 3.1
pF
CT1/CT28
22 CT/CT 2.5
% nH
rS Ls
Package Outline SOD-323
Dimensions in mm
Semiconductor Group 2
BB 641
Diode capacitance CT = f (VR) f = 1 MHz
Semiconductor Group
3
Others parts begin by bb
BB-1 BB-2 BB-3
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