Details, datasheet, quote on part number: BB641
PartBB641
CategoryDiscrete => Diodes & Rectifiers
DescriptionSilicon Variable Capacitance Diode ( For VHF Hyperband Tv/tr Tuners High Capacitance Ratio Low Series Resistance )
CompanySiemens (acquired by Infineon Technologies Corporation)
DatasheetDownload BB641 datasheet
Cross ref.Similar parts: BB171
Quote
Find where to buy
 
  

 

Features, Applications

For VHF Hyperband TV/TR tuners High capacitance ratio Low series resistance

Maximum Ratings Parameter Reverse voltage Reverse voltage 5 k) Forward current Operating temperature range Storage temperature range Thermal Resistance Junction-ambient Symbol Values Unit mA C

Electrical Characteristics = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Reverse current 85 C Diode capacitance = 1 MHz = 1 MHz Capacitance ratio = 1 MHz Capacitance matching = 1 V... = 1 MHz Series resistance = 30 pF, = 100 MHz Series inductance Value typ. max. Unit


 

Some Part number from the same manufacture Siemens (acquired by Infineon Technologies Corporation)
BBY24-BBY27 Silicon Tuning Varactors ( Abrupt Junction Tuning Diode Tuning Range 120 V )
BBY24-S1
BBY25-S1
BBY26-S1
BBY27-S2
BBY33BB-2 Silicon Tuning Varactor ( Tuning Varactor in Passivated Mesa Technology Epitaxial Design )
BBY33DA-2 Silicon Tuning Varactor ( Abrupt Junction Tuning Diode Tuning Range 25 V High Figure of Merit )
BBY34C Silicon Tuning Varactors ( Hyperabrupt Junction Tuning Diode Frequency Linear Tuning Range 4 12 V )
BBY34D
BBY35F Silicon Tuning Varactor ( Hyperabrupt Junction Tuning Diode Frequency Linear Tuning Range 4 12 V )
BC121 NPN Silicon Transistors
BC122
BC123
BC201 PNP Silicon Transistor
BC202
BC203
BC846-BC850 NPN Silicon af Transistors ( For af Input Stages And Driver Applications High Current Gain )
BC846W-BC850W NPN Silicon af Transistor ( For af Input Stages And Driver Applications High Current Gain Low Collector-emitter Saturation Voltage )
BC856W-BC860W PNP Silicon af Transistors ( For af Input Stages And Driver Applications High Current Gain Low Collector-emitter Saturation Voltage )
BCP51-BCP53 PNP Silicon af Transistors ( For af Driver And Output Stages High Collector Current )
BCP51MBCP53M PNP Silicon af Transistor ( For af Driver And Output Stages High Collector Current )
Same catergory

2SA1858 : VCEO(V) = -300 ;; IC(A) = -0.07 ;; HFE(min) = 30 ;; HFE(max) = 150 ;; Package = TO-92NL-A1.

53257 : Radiation Tolerant, 120 Vdc, 2 A, Mil Temp, Sm. Pkg.. Design for 100 krad(Si) Total Dose Hermetically Sealed in Surface Mount Package Low On-resistance 2A Continuous Output Current Operation over Full Military Temperature Range to +125C Optically Coupled Input / Output Isolation Tested to 1000 VDC Shock and Vibration Resistance Satellite/Space Systems Military/High Reliability Systems Power Distribution/Switching.

FDB300-FDB310 : . 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 PRV Ratings from to 1000 Volts Surge overload rating to 50 Amps peak Reliable low cost molded plastic construction Ideal for printed circuit board applications Case: Molded plastic, U/L Flammability Rating 94V-0 Terminals: Round silver plated copper pins Soldering:.

MJ3055 : Screening Options Available = ;; Polarity = NPN ;; Package = TO3 (TO204AA) ;; Vceo = 60V ;; IC(cont) = 10A ;; HFE(min) = 20 ;; HFE(max) = 70 ;; @ Vce/ic = 4V / 4A ;; FT = 2MHz ;; PD = 117W.

SD1441 : Microwave. RF NPN Transistor.

STBV32 : High Voltage Fast-switching NPN Power Transistor. Ordering Code STBV32 STBV32-AP Marking BV32 Package / Shipment TO-92 / Bulk TO-92 / Ammopack HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED COMPACT FLUORESCENT LAMPS (CFLS) TO-92 Bulk TO-92 Ammopack The device is manufactured using High Voltage Multi Epitaxial Planar.

TEMT4700-GS08 : Phototransistor. is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC2 package for surface mounting on printed boards. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation. A base terminal is available to enable biasing and sensitivity control. PLCC2 SMD package Extra wide viewing angle 60 Package.

UFS330 : Ultra Fast Recovery Rectifiers.

XBP1009 : Transient Voltage Suppressor (TVS) Transient Voltage Suppressor (TVS)e.

05002560AGZB : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.000056 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 5.60E-5 microF ; Capacitance Tolerance: 2 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

CPF-31000FT-1B14 : RES,AXIAL,METAL FILM,100 OHMS,500WV,1% +/-TOL,-100,100PPM TC. s: Category / Application: General Use.

FCX649TA : 2 A, 25 V, NPN, Si, POWER TRANSISTOR. s: Polarity: NPN.

PS20L : RESISTOR, POTENTIOMETER, 0.05; 0.025; 0.1 W, 500 ohm - 1000000 ohm. s: Potentiometer Type: Standard Potentiometer ; Mounting / Packaging: ThroughHole, ROHS COMPLIANT.

RL-7500-0-100M : 1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Molded / Shielded: Shielded ; Application: General Purpose, Power Choke ; Inductance Range: 10 microH ; Rated DC Current:.

RPER11H105K3K1C01B : CAPACITOR, CERAMIC, MULTILAYER, 50 V, R, 1 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 50 volts ; Mounting Style: Through.

2N3054AR1 : 4 A, 55 V, NPN, Si, POWER TRANSISTOR, TO-66. s: Polarity: NPN. GENERAL PURPOSE SWITCHING AND AMPLIFIER APPLICATIONS. MAINTENANCE STATUS DO NOT USE ON NEW DESIGNS ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO VCEO VCER VEB IC IC(PK) IB PD TJ,Tstg Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage (RBE = 100W) Emitter Base Voltage Continuous Collector Current.

 
0-C     D-L     M-R     S-Z