Details, datasheet, quote on part number: BBY24-BBY27
PartBBY24-BBY27
CategoryAnalog & Mixed-Signal Processing => Amplifiers => High Dynamic Range Amplifiers
DescriptionSilicon Tuning Varactors ( Abrupt Junction Tuning Diode Tuning Range 120 V )
CompanySiemens (acquired by Infineon Technologies Corporation)
DatasheetDownload BBY24-BBY27 datasheet
  

 

Features, Applications

q Abrupt junction tuning diode q Tuning range 120 V

Maximum Ratings Parameter Reverse voltage Junction temperature Storage temperature range Operating temperature range Symbol BBY VR Tj Tstg Top Values BBY V C Unit


 

Some Part number from the same manufacture Siemens (acquired by Infineon Technologies Corporation)
BBY24-S1 Silicon Tuning Varactors ( Abrupt Junction Tuning Diode Tuning Range 120 V )
BBY25-S1
BBY26-S1
BBY27-S2
BBY33BB-2 Silicon Tuning Varactor ( Tuning Varactor in Passivated Mesa Technology Epitaxial Design )
BBY33DA-2 Silicon Tuning Varactor ( Abrupt Junction Tuning Diode Tuning Range 25 V High Figure of Merit )
BBY34C Silicon Tuning Varactors ( Hyperabrupt Junction Tuning Diode Frequency Linear Tuning Range 4 12 V )
BBY34D
BBY35F Silicon Tuning Varactor ( Hyperabrupt Junction Tuning Diode Frequency Linear Tuning Range 4 12 V )
BC121 NPN Silicon Transistors
BC122
BC123
BC201 PNP Silicon Transistor
BC202
BC203
BC846-BC850 NPN Silicon af Transistors ( For af Input Stages And Driver Applications High Current Gain )
BC846W-BC850W NPN Silicon af Transistor ( For af Input Stages And Driver Applications High Current Gain Low Collector-emitter Saturation Voltage )
BC856W-BC860W PNP Silicon af Transistors ( For af Input Stages And Driver Applications High Current Gain Low Collector-emitter Saturation Voltage )
BCP51-BCP53 PNP Silicon af Transistors ( For af Driver And Output Stages High Collector Current )
BCP51MBCP53M PNP Silicon af Transistor ( For af Driver And Output Stages High Collector Current )
BCP54BCP56 NPN Silicon af Transistors ( For af Driver And Output Stages High Collector Current )
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