Details, datasheet, quote on part number: BC856W-BC860W
PartBC856W-BC860W
CategoryDiscrete => Transistors => Bipolar => Audio Amplifier Application => PNP
DescriptionPNP Silicon af Transistors ( For af Input Stages And Driver Applications High Current Gain Low Collector-emitter Saturation Voltage )
CompanySiemens (acquired by Infineon Technologies Corporation)
DatasheetDownload BC856W-BC860W datasheet
  

 

Features, Applications

Features

q For AF input stages and driver applications q High current gain q Low collector-emitter saturation voltage q Low noise between 30 Hz and 15 kHz q Complementary types: BC 848W,

Maximum Ratings Description Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Total power dissipation, 115 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS

Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg

Collector-base breakdown voltage BC 859W Collector-emitter breakdown voltage = 10 A, VBE BC 859W Emitter-base breakdown voltage 1 A Collector cutoff current VCB 30 V VCB C DC current gain = 10 A, VCE BC 856 AW... BC 856 BW... BC 857 CW... = 2 mA, VCE BC 856 AW... BC 856 BW... BC 857 CW... 860 CW Collector-emitter saturation = 10 mA, = 100 mA, 5 mA Base-emitter saturation = 10 mA, = 100 mA, 5 mA Base-emitter voltage = 2 mA, VCE = 10 mA, VCE 5 V


 

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