Details, datasheet, quote on part number: HYM324020S-50
CategoryAnalog & Mixed-Signal Processing => Amplifiers => High Dynamic Range Amplifiers
Description4m X 32-bit Dynamic RAM Module
CompanySiemens (acquired by Infineon Technologies Corporation)
DatasheetDownload HYM324020S-50 datasheet


Features, Applications

194 304 words by 32-bit organization (alternative 388 608 words by 16-bit) Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) Fast page mode capability 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single V 10 supply Low power dissipation max. 4840 mW active (HYM 324020S/GS-60) max. 4400 mW active (HYM 324020S/GS-70) CMOS 44 mW standby TTL 88 mW standby

CAS-before-RAS refresh RAS-only-refresh Hidden-refresh 8 decoupling capacitors mounted on substrate All inputs, outputs and clocks fully TTL compatible 72 pin Single in-Line Memory Module with mm (900 mil) height Utilizes eight in 300mil wide SOJ-packages 2048 refresh cycles 32 ms Tin-Lead contact pads (S - version) Gold contact pads (GS - version)

Ordering Information Type HYM 324020S-60 HYM 324020S-70 HYM 324020GS-60 HYM 324020GS-70 Ordering Code Q67100-Q2005 on request Package L-SIM-72-12 Description DRAM Module (access time 60 ns) DRAM Module (access time 70 ns) DRAM Module (access time 60 ns) DRAM Module (access time 70 ns)

The HYM 16 M Byte DRAM module organized 194 304 words a 72-pin single-in-line package comprising eight HYB x 4 DRAMs in 300 mil wide SOJ-packages mounted together with eight 0.2 F ceramic decoupling capacitors a PC board. The HYM 324020S/GS-60/-70 can also be used 388 608 words by 16-bits dynamic RAM module by means of connecting DQ0 and DQ16, DQ1 and DQ17, DQ2 and DQ18,..., DQ15 and DQ31, respectively. Each HYB 5117400BJ is described in the data sheet and is fully electrical tested and processed according to SIEMENS standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed. The speed of the module can be detected by the use of four presence detect pins. The common I/O feature on the HYM 324020S/GS-60/-70 dictates the use of early write cycles.

Pin Definitions and Functions Pin No. RAS2 WE Functions Address Inputs for HYM 324020S/GS Data Input/Output Column Address Strobe Row Address Strobe Read/Write Input Power 5 V) Ground Presence Detect Pin No Connection


Related products with the same datasheet
Some Part number from the same manufacture Siemens (acquired by Infineon Technologies Corporation)
HYM324020S-GS50 4m X 32-bit Dynamic RAM Module
HYM324025GS-50 4m X 32-bit Edo-dram Module
HYM328000GD 8m X 32-bit Dynamic RAM Module Small Outline Memory Module
HYM328020S 8m X 32-bit Dynamic RAM Module
HYM361120 1m X 36-bit Dynamic RAM Module ( 2m X 18-bit Dynamic RAM Module )
HYM362140GS-60 2m X 36-bit Dynamic RAM Module
HYM364020S 4m X 36-bit Dynamic RAM Module
HYM364025S 4m X 36-bit Edo - DRAM Module
HYM364035S 4m X 36-bit Edo-dram Module
HYM368020S 8m X 36-bit Dynamic RAM Module
HYM368025S 8m X 36-bit Edo - DRAM Module
HYM368035S 8m X 36-bit Edo-dram Module
HYM641010GS-60 1m X 64-bit Dynamic RAM Module
HYM64V1005GU-5 3.3v 1m X 64-bit Edo-dram Module 3.3v 1m X 72-bit Edo-dram Module
HYM64V4045GU-50 3.3v 4m X 64-bit Edo-dram Module 3.3v 4m X 72-bit Edo-dram Module

C67067-A1403-A2 : Fred Diode ( Fast Recovery Epitaxial Diode Soft Recovery Characteristics )

Q62702-C1654 : PNP Silicon High-voltage Transistors

Q62702-C2319 : PNP Silicon High-voltage Transistors

Q62702-D239 : PNP Silicon High-voltage Transistors

Q62702-F1591 : PNP Silicon High-voltage Transistors

Q62702-F503 : PNP Silicon High-voltage Transistors

Q62703-Q3470 : npn Sisicon Transistor

Q67000-A9269 : Control IC for Single-ended and Push-pull Switched-mode Power Supplies SMPS

Q67120-P302 : Advanced Peripheral Interface Controller

B32563-J1155-K : Metallized Polyester Film Capacitors (mkt) Uncoated (silver Caps)

0-C     D-L     M-R     S-Z