|Category||Analog & Mixed-Signal Processing => Amplifiers => High Dynamic Range Amplifiers|
|Description||8m X 32-bit Dynamic RAM Module|
|Company||Siemens (acquired by Infineon Technologies Corporation)|
|Datasheet||Download HYM328020S datasheet
SIMM modules with 388 608 words by 32-bit organization for PC main memory applications Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version) Fast page mode capability 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) Single V 10 supply Low power dissipation max. 5280 mW active (-50 version) max. 4840 mW active (-60 version) CMOS 88 mW standby TTL 176 mW standby CAS-before-RAS refresh RAS-only-refresh Hidden-refresh 16 decoupling capacitors mounted on substrate All inputs, outputs and clocks fully TTL compatible 72 pin Single in-Line Memory Module (L-SIM-72) with 25.40 mm height Utilizes sixteen 4Mx4-DRAMs in SOJ packages 2048 refresh cycles 32 ms Optimized for use in byte-write non-parity applications Tin-Lead contact pads (S- version) Gold contact pads (GS -version)
The HYM a 32 MByte DRAM module organized 388 608 words a 72-pin single-in-line package comprising sixteen HYB × 4 DRAMs in 300 mil wide SOJ-packages mounted together with sixteen 0.2 µF ceramic decoupling capacitors a PC board. The HYM 328020S/GS-50/-60 can also be used 777 360 words by 16-bits dynamic RAM module by means of connecting DQ0 and DQ16, DQ1 and DQ17, DQ2 and , DQ15 and DQ31, respectively. Each HYB 5117400BJ is described in the data sheet and is fully electrical tested and processed according to SIEMENS standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed. The speed of the module can be detected by the use of four presence detect pins. The common I/O feature on the HYM 328020S/GS-50/-60 dictates the use of early write cycles. Ordering Information Type HYM 328020S-50 HYM 328020S-60 HYM 328020GS-50 HYM Q67100-Q2008 Q67100-Q2001 Ordering Code Package L-SIM-72-15 Description DRAM Module (access time 50 ns) DRAM Module (access time 60 ns) DRAM Module (access time 50 ns) DRAM Module (access time 60 ns)
VSS DQ18 DQ19 N.C. DQ22 DQ23 N.C A8 RAS3 N.C. VSS DQ11 DQ12 VCC PD0 PD2 N.C. 8 9 VCC 28 29 VCC 34 35 N.C. 36 37 N.C. 44 45 N.C. 46 N.C. 64 65 N.C. 70 71 VSS 72
Address Inputs Data Input/Output Column Address Strobe Row Address Strobe Read/Write Input Power 5 V) Ground Presence Detect Pin No Connection
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