Details, datasheet, quote on part number: HYM361140S-70
PartHYM361140S-70
CategoryAnalog & Mixed-Signal Processing => Amplifiers => High Dynamic Range Amplifiers
Description1m X 36-bit Dynamic RAM Module ( 2m X 18-bit Dynamic RAM Module )
CompanySiemens (acquired by Infineon Technologies Corporation)
DatasheetDownload HYM361140S-70 datasheet
  

 

Features, Applications

048 576 words by 36-bit organization (alternative 097 152 words by 18-bit) Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) Fast page mode capability with 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single V 10 supply Low power dissipation max. 6820 mW active (-60 version) max. 6160 mW active (-70 version) CMOS 66 mW standby TTL 132 mW standby CAS-before-RAS refresh, RAS-only-refresh, Hidden refresh

12 decoupling capacitors mounted on substrate All inputs, outputs and clock fully TTL compatible 72 pin Single in-Line Memory Module Utilizes four 1-DRAMs and eight in 300 mil SOJ packages 1024 refresh cycles/16 ms Tin-Lead contact pads (S - version) Gold contact pads (GS - version) HYM 321140S: single sided module with mm (1250 mil) height HYM 321120S: double sided module with mm (1000 mil) height

Ordering Information Type HYM 361140S-60 HYM 361140S-70 HYM 361120S-60 HYM 361120S-70 HYM 361140GS-60 HYM 361140GS-70 HYM 361120GS-60 HYM 361120GS-70 Ordering Code Q67100-Q961 Q67100-Q960 Package L-SIM-72-8 L-SIM-72-3 Descriptions DRAM module (access time 60 ns) DRAM module (access time 70 ns) DRAM module (access time 60 ns) DRAM module (access time 70 ns) DRAM module (access time 60 ns) DRAM module (access time 70 ns) DRAM module (access time 60 ns) DRAM module (access time 70 ns)

The HYM a 4 MByte DRAM module organized 048 576 words a 72-pin single-in-line package comprising four HYB 1 DRAMs and eight HYB 4 DRAMs in 300 mil wide SOJ-packages mounted together with twelve 0.2 F ceramic decoupling capacitors a PC board. The HYM 361120/40S/GS-60/-70 can also be used 097 152 words by 18-bits dynamic RAM module by means of connecting DQ0 and DQ18, DQ1 and DQ19, DQ2 and DQ20,..., DQ17 and DQ35, respectively. Each HYB 511000BJ and HYB 514400BJ is described in the data sheet and is fully electrically tested and processed according to Siemens standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed. The speed of the module can be detected by the use of four presence detect pins. The common I/O feature on the HYM 361120/40S/GS-60/-70 dictates the use of early write cycles.

Pin Definitions and Functions Pin No. RAS2 WE Function Address Inputs Data Input/Output Column Address Strobe Row Address Strobe Read/Write Input Power 5 V) Ground Presence Detect Pin No Connection


 

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