Details, datasheet, quote on part number: HYM364025S-50
PartHYM364025S-50
CategoryMemory => DRAM => EDO/FPM DRAM
Description4m X 36-bit Edo - DRAM Module
CompanySiemens (acquired by Infineon Technologies Corporation)
DatasheetDownload HYM364025S-50 datasheet
  

 

Features, Applications

SIMM modules with 194 304 words by 36-Bit organization for PC main memory applications Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) Hyper Page Mode (EDO) capability 20 ns cycle time (-50 version) 25 ns cycle time (-60 version) Single V 10 supply Low power dissipation max. 6820 mW active (-50 version) max. 6160 mW active (-60 version) CMOS 66 mW standby TTL 132 mW standby CAS-before-RAS refresh RAS-only-refresh Hidden-refresh Decoupling capacitors mounted on substrate All inputs, outputs and clocks fully TTL compatible 72 pin Single in-Line Memory Module (L-SIM-72-12) with mm (900 mil) height Utilizes eight 4Mx4-EDO-DRAMs and four 4Mx1-EDO-DRAMs in SOJ packages 2048 refresh cycles 32 ms Optimized for use in byte-write parity applications Tin-Lead contact pads (S-version) Gold contact pads (GS - version)

The HYM a 16 MByte DRAM module organized 194 304 words a 72-pin single-in-line package comprising eight HYB 4 EDO-DRAMs and four HYB x 1 EDO-DRAMs in 300 mil wide SOJ-packages mounted together with ceramic decoupling capacitors a PC board. Each HYB 5117405BJ and HYB 514105BJ is described in the data sheet and is fully electrical tested and processed according to SIEMENS standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed. The speed of the module can be detected by the use of four presence detect pins. The common I/O feature on the HYM 364025S/GS-50/-60 dictates the use of early write cycles. Ordering Information Type HYM 364025S-50 HYM 364025S-60 HYM 364025GS-50 HYM 364025GS-60 Ordering Code on request Q67100-Q2366 on request Q67100-Q2367 Package L-SIM-72-12 Description EDO-DRAM Module (access time 50 ns) EDO-DRAM Module (access time 60 ns) EDO-DRAM Module (access time 50 ns) EDO-DRAM Module (access time 60 ns)

Address Inputs Data Input/Output Column Address Strobe Row Address Strobe Read/Write Input Power 5 V) Ground Presence Detect Pin No Connection


 

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