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Details, datasheet, quote on part number:OBTS141
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| Part: | OBTS141 |
| Category: | Power Management => AC-DC Controllers/Converters => High & Low Side Switch |
| Description: | Smart Lowside Power Switch |
| Company: | Siemens (acquired by Infineon Technologies Corporation) |
| Datasheet: | Download OBTS141 datasheet File size : 142 kB |
| Request For quote: | Find where to buy OBTS141
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Datasheet text preview:
HITFET® BTS 141
Smart Lowside Power Switch
Features · Logic Level Input · Input Protection (ESD) · Thermal Shutdown · Overload protection · Short circuit protection · Overvoltage protection · Current limitation · Status feedback with external input resistor · Analog driving possible
Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy
VDS RDS(on) ID(lim) ID(ISO) EAS
60 28 25 12
V m A A
4000 mJ
Application
· All kinds of resistive, inductive and capacitive loads in switching or linear applications · µC compatible power switch for 12 V and 24 V DC applications · Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS ® chip on chip technology. Fully protected by embedded protected functions.
V bb
+
LOAD M
Drain 2 dv/dt limitation Current lim i t a t i o n Overvoltage protection
1
IN
ESD
Overload protection
Overtemperature protection
S h o r t circuit S h o r t circuit p rro tte c ttiio n p o ec on Source
3
HITFET
®
Semiconductor Group
Page 1
13.07.1998
BTS 141
Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection Continuous input current 1) -0.2V VIN 10V Symbol Value 60 32 mA no limit | IIN | 2 Unit V
VDS VDS(SC) IIN
VIN 10V
Operating temperature Storage temperature Power dissipation
Tj Tstg Ptot EAS
- 40 ... +150 - 55 ... +150 149 4000 3000
°C W mJ V
TC = 25 °C
Unclamped single pulse inductive energy
ID(ISO) = 12 A
Electro static discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Load dump protection VLoadDump2) = VA + VS
VLD
100 84 E 40/150/56
V
VIN=low or high; VA=13.5 V
td = 400 ms, RI = 2 , ID=0,5*12A td = 400 ms, RI = 2 , ID= 12A DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1 Thermal resistance junction - case: junction - ambient: SMD version, device on PCB:
3)
R thJC R thJA R thJA
0.84 75 45
K/W
1A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3) 2V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical 2
without blown air.
Semiconductor Group
Page 2
13.07.1998
BTS 141
Electrical Characteristics Parameter at Tj=25°C, unless otherwise specified Characteristics Drain source clamp voltage Symbol min. Values typ. 1.7 35 270 2500 max. 73 20 2.2 100 500 4000 V µA V µA Unit
VDS(AZ) IDSS VIN(th) IIN(1)
60 1.3 1000
Tj = - 40 ...+ 150°C, ID = 10 mA
Off state drain current
VDS = 32 V, Tj = -40...+150 °C, VIN = 0 V Input threshold voltage ID = 2,7 mA
Input current - normal operation, ID VIN = 10 V
Input current - current limitation mode, ID=ID(lim) : IIN(2)
VIN = 10 V
Input current - after thermal shutdown, ID =0 A:
IIN(3) IIN(H)
VIN = 10 V
Input holding current after thermal shutdown
Tj = 25 °C Tj = 150 °C
On-state resistance
500 300
31 52 25 45 -
m 34 68 28 56 A
RDS(on)
-
ID = 12 A, VIN = 5 V, Tj = 25 °C ID = 12 A, VIN = 5 V, Tj = 150 °C
On-state resistance
RDS(on)
12
ID = 12 A, VIN = 10 V, Tj = 25 °C ID = 12 A, VIN = 10 V, Tj = 150 °C
Nominal load current (ISO 10483)
ID(ISO)
VIN = 10 V, VDS = 0.5 V, TC = 85 °C
Semiconductor Group
Page 3
13.07.1998
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