|
Details, datasheet, quote on part number:OBTS917
| |
| Part: | OBTS917 |
| Category: | Power Management => AC-DC Controllers/Converters => High & Low Side Switch |
| Description: | Smart Lowside Power Switch |
| Company: | Siemens (acquired by Infineon Technologies Corporation) |
| Datasheet: | Download OBTS917 datasheet File size : 198 kB |
| Request For quote: | Find where to buy OBTS917
|
| |
Datasheet text preview:
HITFET® BTS 917
Smart Lowside Power Switch
Features · Logic Level Input · Input Protection (ESD) · Thermal Shutdown · Overload protection · Short circuit protection · Overvoltage protection
· Current
Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy
VDS RDS(on) ID(lim) ID(ISO) EAS
60 1.5 3.5
V A A
100 m
1000 mJ
limitation
· Maximum current adjustable with external resistor · Current sense · Status feedback with external input resistor · Analog driving possible
Application
· All kinds of resistive, inductive and capacitive loads in switching or linear applications · µC compatible power switch for 12 V and 24 V DC applications · Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS ® chip on chip technology. Fully protected by embedded protected functions.
V bb
+
LOAD NC Drain dv/dt limitation Current limitation Overvoltage protection M
2
3
1
IN
4
CC Overtemperature protection
ESD R CC
Overload protection
S h o r t circuit S h o r t circuit p r o tte c ttiio n pro ec on Source 5
HITFET
®
Semiconductor Group
Page 1
14.07.1998
BTS 917
Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection RCC = 0 without RCC Continuous input current -0.2V VIN 10V
1)
Symbol
Value 60 15 50
Unit V
VDS VDS(SC)
IIN
no limit | IIN | 2 - 40 ... +150 - 55 ... +150 50 1000 3000
mA
VIN 10V
Operating temperature Storage temperature Power dissipation
Tj Tstg Ptot EAS
°C W mJ V
TC = 25 °C
Unclamped single pulse inductive energy
ID(ISO) = 3.5 A
Electro static discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Load dump protection VLoadDump2) = VA + VS
VLD
75 70 E 40/150/56
VIN=low or high; VA=13.5 V
td = 400 ms, RI = 2 , ID=0,5*3.5A td = 400 ms, RI = 2 , ID= 3.5A DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1
Thermal resistance junction - case: junction - ambient: SMD version, device on PCB:
3)
R thJC R thJA R thJA
2.5 75 45
K/W
1A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3) 2V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical 2
without blown air.
Semiconductor Group
Page 2
14.07.1998
BTS 917
Electrical Characteristics Parameter at Tj=25°C, unless otherwise specified Characteristics Drain source clamp voltage Symbol min. Values typ. 1.7 30 120 2200 max. 73 5 2.2 60 300 4000 V µA V µA Unit
VDS(AZ) IDSS VIN(th) IIN(1)
60 1.3 -
Tj = - 40 ...+ 150°C, ID = 10 mA
Off state drain current
VDS = 32 V, Tj = -40...+150 °C, VIN = 0 V Input threshold voltage ID = 0,7 mA
Input current - normal operation, ID VIN = 10 V
Input current - current limitation mode, ID=ID(lim) : IIN(2)
VIN = 10 V
Input current - after thermal shutdown, ID=0 A:
IIN(3) IIN(H)
VIN = 10 V
Input holding current after thermal shutdown
Tj = 25 °C Tj = 150 °C
On-state resistance
500 300
90 180 80 160 -
m 120 240 100 200 A
RDS(on)
-
ID = 3.5 A, VIN = 5 V, Tj = 25 °C ID = 3.5 A, VIN = 5 V, Tj = 150 °C
On-state resistance
RDS(on)
3.5
ID = 3.5 A, VIN = 10 V, Tj = 25 °C ID = 3.5 A, VIN = 10 V, Tj = 150 °C
Nominal load current (ISO 10483)
ID(ISO)
VIN = 10 V, VDS = 0.5 V, TC = 85 °C
Semiconductor Group
Page 3
14.07.1998
|
|
