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Details, datasheet, quote on part number:Q-62702-G66
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| Part: | Q-62702-G66 |
| Category: | Analog & Mixed-Signal Processing => Amplifiers |
| Description: | GAAS Mmic ( Variable Gain Amplifier Mmic-amplifier For Mobile Communication Typical Gain Control Range Over 50db ) |
| Company: | Siemens (acquired by Infineon Technologies Corporation) |
| Datasheet: | Download Q-62702-G66 datasheet File size : 96 kB |
| Request For quote: | Find where to buy Q-62702-G66
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Datasheet text preview:
CGY 121 A
GaAs MMIC Preliminary Datasheet
l l l l l l l
RF-in; -Vg Vcontrol 6 RF-GND 5 4
Variable gain amplifier (MMIC-Amplifier) for mobile communication Typical Gain Control range over 50dB Positive Control Voltage 50 input and output matched Low power consumption Operating voltage range: 2.7 to 6 V Frequency range 800 MHz ... 2.5 GHz
3 2 1 Vd2; RF-out RF-GND Vd1
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering code (taped)
Package1)
CGY 121 A
Y9S
Q-62702-G66
MW-6
Maximum ratings Characteristics Drain voltage Neg. supply voltage Pos. control voltage Channel temperature Storage temperature range Total power dissipation (TS < 81°C) 2) Thermal resistance Characteristics Channel-soldering point (GND)
1) 2)
Symbol
max. Value 8 -8 4 150 -55...+150 550
Unit V V V °C °C mW
VD VG Vcon TCh Tstg Ptot
Symbol
max. Value 125
Unit K/W
RthChS
Dimensions see page 9. Please care for sufficient heat dissipation on the pcb! *) Pin-out changed compared to CGY120: 180° rotation
Siemens Aktiengesellschaft
1
Semiconductor Group
1
23.06.98 HL HF PE GaAs1 1998-11-01
CGY 121 A
Functional block diagram:
VD1 (3)
VD2 (1)
Pin / -VG(4) Pout (1) Vcon (6) Control Circuit
GND (2, 5)
Pin # 1 2 3 4 5 6
Name VD2 / Pout RF-Gnd VD1 VG / Pin RF-Gnd
Configuration Drain voltage 2nd stage / RF-0utput
Drain voltage 1st stage Negative voltage at current control circuit (-4V) / RF-Input
Vcontrol Positive voltage for gain control (0V....3V)
Siemens Aktiengesellschaft
2
Semiconductor Group
2
23.06.98 HL HF PE GaAs1 1998-11-01
CGY 121 A
Electrical characteristics (TA = 25°C, f = 900 MHz, Vg = -4V, RS = RL = 50 unless otherwise specified) Characteristics Power Gain Vd=3V; I=45mA; Vcon=3V Input return loss Vd=3V; I=45mA; Vcon=3V Output return loss Vd=3V; I=45mA; Vcon=3V Gain Control Range Vcon=3 V ... 0V; Vd=3V; I=45mA 1dB gain compression Vd=3V; I=45mA; Vcon=3V Symbol min 17 48 typ 19 11 10 53 14 max Unit dB dB dB dB d Bm
G RLin RLout dG P1 d B
Electrical characteristics (TA = 25°C ,f = 1800 MHz, Vg=-4V, RS = RL = 50 unless otherwise specified) Characteristics Power Gain Vd=3V; I=45mA; Vcon=3V Input return loss Vd=3V; I=45mA; Vcon=3V Output return loss Vd=3V; I=45mA; Vcon=3V Gain Control Range Vcon=3 V ... 0V; Vd=3V; I=45mA 1dB gain compression Vd=3V; I=45mA; Vcon=3V DC characteristics Characteristics Gate current (Pin 4) Vg=-4V Control current (Pin 6) Vg=-4V; Vcon=0V...3V Supply current Vg = -4V; Vcon = 3V
Siemens Aktiengesellschaft
Symbol
min 15.5 48 -
typ 17.5 10 8 .5 53 14
max -
Unit dB dB dB dB d Bm
G RLin RLout dG P1 d B
Symbol Ig Ic Id
min -
typ 1 .0 0 .5 45
max -
Unit mA mA mA
3
Semiconductor Group
3
23.06.98 HL HF PE GaAs1 1998-11-01
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