Details, datasheet, quote on part number: Q60215-Y111-S4
DescriptionSilizium-fotoelement Silicon Photovoltaic Cell
CompanySiemens (acquired by Infineon Technologies Corporation)
DatasheetDownload Q60215-Y111-S4 datasheet


Features, Applications

Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Bereich von 420 nm bis nm q Kathode = Chipunterseite q Mit feuchtigkeitsabweisender Schutzschicht überzogen q Gruppiert lieferbar Anwendungen q für Me-, Steuer- und Regelzwecke q zur Abtastung von Lichtimpulsen q quantitative Lichtmessung im sichtbaren Licht- und nahen Infrarotbereich Typ Type BPY P IV BPY P V Bestellnummer Ordering Code Q60215-Y111-S4 Q60215-Y111-S5

nm q Cathode = back contact q Coated with a humidity-proof protective layer q Binned by spectral sensitivity Applications q For control and drive circuits q Light pulse scanning q Quantitative light measurements in the visible light and near infrared range

Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Symbol Wert Value Einheit Unit °C V

Kennwerte (TA = 25 °C, Normlicht 2856 K) Characteristics (TA = 25 °C, standard light 2856 K) Bezeichnung Description Fotoempfindlichkeit, 0 V Spectral sensitivity Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit 10 % von Smax Spectral range of sensitivity % of Smax Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessungen der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area Halbwinkel Half angle Dunkelstrom, = 0 Dark current Spektrale Fotoempfindlichkeit, 850 nm Spectral sensitivity Quantenausbeute, 850 nm Quantum yield Leerlaufspannung, 1000 Ix Open-circuit voltage Kurzschlustrom, 1000 Ix Short-circuit current Symbol Wert Value Einheit Unit nA/Ix nm

Kennwerte (TA = 25 °C, Normlicht 2856 K) Characteristics (TA = 25 °C, standard light 2856 K) Bezeichnung Description Anstiegs und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL= = 850 nm; 50 µA Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Kapazität, = 1 MHz, = 0 Capacitance Fotoempfindlichkeitsgruppen Spectral sensitivity groups Typ Type BPY P IV BPY P V Symbol Wert Value 3 Einheit Unit µs


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