Details, datasheet, quote on part number: Q60215-Y63-S1
DescriptionSilizium-fotoelement Silicon Photovoltaic Cell
CompanySiemens (acquired by Infineon Technologies Corporation)
DatasheetDownload Q60215-Y63-S1 datasheet


Features, Applications

Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
q Cathode = back contact q Coated with a humidity-proof protective

q fr Me-, Steuer- und Regelzwecke q zur Abtastung von Lichtimpulsen q quantitative Lichtmessung im sichtbaren

q For control and drive circuits q Light pulse scanning q Quantitative light measurements in the

Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Symbol Wert Value Einheit Unit C V

Kennwerte (TA = 25 C, Normlicht 2856 K) Characteristics (TA = 25 C, standard light 2856 K) Bezeichnung Description Fotoempfindlichkeit, 0 V Spectral sensitivity Wellenlnge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit 10 % von Smax Spectral range of sensitivity % of Smax Bestrahlungsempfindliche Flche Radiant sensitive area Abmessungen der bestrahlungsempfindlichen Flche Dimensions of radiant sensitive area Halbwinkel Half angle Dunkelstrom, = 0 Dark current Spektrale Fotoempfindlichkeit, 850 nm Spectral sensitivity Quantenausbeute, 850 nm Quantum yield Leerlaufspannung, 1000 Ix Open-circuit voltage Kurzschlustrom, 1000 Ix Short-circuit current Symbol Wert Value Einheit Unit A/Ix nm

Kennwerte (TA = 25 C, Normlicht 2856 K) Characteristics (TA = 25 C, standard light 2856 K) Bezeichnung Description Anstiegs und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL= = 850 nm; 50 A Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Kapazitt, = 1 MHz, 0 Ix Capacitance Symbol Wert Value 11 Einheit Unit s


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