Details, datasheet, quote on part number: SFH320F
CategoryDiscrete => Transistors => Bipolar => Audio Amplifier Application => NPN
DescriptionNpn-silizium-fototransistor im SMT Topleda-gehause Silicon NPN Phototransistor in SMT Topleda-package
CompanySiemens (acquired by Infineon Technologies Corporation)
DatasheetDownload SFH320F datasheet
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Features, Applications

NPN-Silizium-Fototransistor im ® SMT TOPLED -Gehäuse Silicon NPN Phototransistor in ® SMT TOPLED -Package

Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Bereich von 380 nm bis 1150 nm (SFH 320) und bei 880 nm (SFH 320 FA) Hohe Linearität P-LCC-2 Gehäuse Gruppiert lieferbar für alle Lötverfahren geeignet

1150 nm (SFH 320) and 880 nm (SFH 320 FA) High linearity P-LCC-2 package Available in groups Suitable for all soldering methods


Wechsellichtbetrieb q Lochstreifenleser q Industrieelektronik q "Messen/Steuern/Regeln" Semiconductor Group 1

Miniature photointerrupters punched tape readers Industrial electronics For control and drive circuits

Typ (*vorher) Type (*formerly) SFH 320 FA (*SFH 320 F) SFH 320 FA-3 (*SFH 320 F-3) SFH 320 FA-4 (*SFH 320 F-4)

Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, 10 µs Collector surge current Verlustleistung, 25 °C Total power dissipation Wärmewiderstand für Montage auf PC-Board Thermal resistance for mounting on pcb Symbol Wert Value Einheit Unit mA mW K/W

Kennwerte (TA = 25 °C, = 950 nm) Characteristics Bezeichnung Description Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit 10 % von Smax Spectral range of sensitivity % of Smax Symbol SFH 320 S max 860 Wert Value SFH 900 nm Einheit Unit

Bestrahlungsempfindliche Fläche ( 240 µm) A Radiant sensitive area Abmessung der Chipfläche Dimensions of chip area Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip front to case surface Halbwinkel Half angle Kapazität, VCE = 1 MHz, = 0 Capacitance Dunkelstrom Dark current VCE = 0


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