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Part: SN7000
Category:
Discrete
-> Transistors
Description: Sipmos Small-signal Transistor
Company: Siemens (acquired by Infineon Technologies Corporation)
Datasheet: Download SN7000 datasheet File size : 314 kB
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Datasheet text preview:
SN 7000
SIPMOS ® Small-Signal Transistor · N channel · Enhancement mode · Logic Level
· VGS(th) = 0.8...2.0V
Pin 1 D Type SN 7000 Type SN 7000 SN 7000
Pin 2 G Marking SN 7000
Pin 3 S
VDS
60 V
ID
0.25 A
RDS(on)
5
Package TO-92
Ordering Code Q62702-S638 Q62702-S637
Tape and Reel Information E6288 E6296
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 60 60 Unit V
VDS V
DGR
RGS = 20 k
Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current
VGS Vgs ID
± 14 ± 20 A 0.25
TA = 25 °C
DC drain current, pulsed
IDpuls
1
TA = 25 °C
Power dissipation
Ptot
0.63
W
TA = 25 °C
Semiconductor Group
1
12/05/1997
SN 7000
Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 200 E 55 / 150 / 56 K/W Unit °C
Tj Tstg RthJA
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
60 1.4 0.1 1 2 3 2
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
0.8
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 5
µA
VDS = 60 V, VGS = 0 V, Tj = 25 °C VDS = 60 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
10
nA 5 5.3
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
RDS(on)
VGS = 10 V, ID = 0.5 A VGS = 4.5 V, ID = 0.075 A
Semiconductor Group
2
12/05/1997
SN 7000
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
0.1 0.2 60 15 15 -
S pF 80 25 25 ns 5 8
VDS 2 * ID * RDS(on)max, ID = 0.2 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
t d(on)
VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50
Rise time
tr
5 8
VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50
Turn-off delay time
t d(off)
12 16
VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50
Fall time
tf
13 17
VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50
Semiconductor Group
3
12/05/1997
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