|
Details, datasheet, quote on part number:2CK120
| |
| Part: | 2CK120 |
| Category: | Discrete => Diodes & Rectifiers => Switching Diodes |
| Description: | Silicon Epitaxial Planar Switching Diode |
| Company: | Shanghai Sunrise Electronics Co. |
| Datasheet: | Download 2CK120 datasheet File size : 16 kB |
| Request For quote: | Find where to buy 2CK120
|
| |
Datasheet text preview:
SILICON EPITAXIAL PLANAR SWITCHING DIODE
REVERSE VOLTAGE: 75V FORWARD CURRENT: 150mA
FEATURES
ˇ Small glass structure ensures high reliability ˇ Fast switching ˇ Low leakage ˇ High temperature soldering guaranteed: 250oC/10S/9.5mm lead length at 5 lbs tension
SHANGHAI SUNRISE ELECTRONICS CO., LTD. 2CK120
TECHNICAL SPECIFICATION
DO - 35
1 .0 (25.4) M IN. .1 2 0 (3.0) .2 0 0 (5.1) 1 .0 (25.4) M IN.
.0 6 0 (1.5) .0 9 0 (2.3) D IA .
MECHANICAL DATA
ˇ Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C ˇ Case: Glass,hermetically sealed ˇ Polarity: Color band denotes cathode ˇ Mounting position: Any
.0 1 8 (0.46) .0 2 2 (0.56) D IA .
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25oC ambient temperature unless otherwise specified)
RATINGS
Reverse Voltage Peak Reverse Voltage Forward Current (average) Repetitive Forward Peak Current Forward Voltage (IF=10mA) Reverse Current (VR=20V) Reverse Current (VR=75V) Reverse Current (VR=20V,TJ=100 C) Capacitance (note 1) Reverse Charge (IF=10mA) Thermal Resistance (junction to ambient, note 2)
o
SYMBOL
VR VRM IO IFRM VF IR1 IR2 Ct Qr R(ja)
VALUE
75 100 150 400 1 25 5 50 4 57 0.35
UNITS
V V mA mA V nA ľA ľA pF pC
o
C/mW
o
TSTG,TJ Operating Junction and Storage Temperature Range -55 +175 Notes: 1. VR=0V, f=1 MHz 2. Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
C
http://www.sse-diode.com
|
|
