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Details, datasheet, quote on part number:RC15S10G
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Datasheet text preview:
SHANGHAI SUNRISE ELECTRONICS CO., LTD. RC15S01G THRU RC15S10G
SILICON GPP CELL RECTIFIER
TECHNICAL SPECIFICATION
VOLTAGE: 100 TO 1000V CURRENT: 15A
FEATURES
ˇ Glass passivated junction chip ˇ High surge capability ˇ Solderable electrode surfaces ˇ Ideal for hybrids
MECHANICAL DATA
ˇ Polarity: Bottom or upper electrode denotes cathode according to the notice in in package
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load, derate current by 20%)
RATINGS
Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current (Ta=55oC) (Note 2) Peak Forward Surge Current (8.3ms single half sine-wave superimposed on rated load) Maximum Instantaneous Forward Voltage (at rated forward current) Maximum DC Reverse Current Ta=25oC (at rated DC blocking voltage) Ta=150 C
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SYMBOL
VRRM VRMS VDC IF(AV) IFSM VF IR
RC15S RC15S RC15S RC15S RC15S RC15S UNITS 01G 02G 04G 06G 08G 10G 100 200 400 600 800 1000 V 70 140 280 420 560 700 V 100 200 400 600 800 1000 V
15 400 1.0 10 300 300 1 -50 to +150
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A A V ľA ľA pF C/W o C
CJ Typical Junction Capacitance (Note 1) Typical Thermal Resistance (Note 3) R(ja) Storage and Operation Junction Temperature TSTG,TJ Note: 1. Measured at 1 MHz and applied voltage of 4.0Vdc 2. When mounted to heat sink from body. 3. Thermal resistance from junction to ambient.
http://www.sse-diode.com
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