Details, datasheet, quote on part number: D2012
PartD2012
Category
DescriptionSi NPN Transistor
CompanyETC
DatasheetDownload D2012 datasheet
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Features, Applications

DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current to 3A *High hFE linearity

ABSOLUTE MAXIMUM RATINGS (Tamb=25 ) PARAMETER SYMBOL Collector-Base Voltage BVCBO Collector-Emitter Voltage BVCEO Emitter-Base Voltage BVEBO Tcase=25 Collector Dissipation PCM Tamb=25 DC ICM Collector Current Pulse Icp Base Current IB Junction Temperature Tj Storage Temperature Tstg

ELECTRICAL CHARACTERISTICS (Tamb=25 ,all voltage referenced to GND Unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance SYMBOL ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob TEST CONDITIONS VcB=10V, IE=0,f=1MHz MIN TYP MAX V MHz pF UNIT nA

Add: No.5 Xijin Road, National Hi-Tech Industrial Development Zone, Wuxi Jiangsu China Tel: 86-510-5205117 86-510-5205108 Fax: 86-510-5205110 Website: www.e-youda.com SHENZHEN OFFICE Tel 86-755-83740369 13823533350 Fax 86-755-83741418 Ver 1 2004-9-20


 

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