Details, datasheet, quote on part number: KI4562DY
DescriptionN- and P-channel 2.5-v (g-s) Mosfet
CompanyGuangdong Kexin Industrial
DatasheetDownload KI4562DY datasheet


Features, Applications

Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* = 70 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient * *Surface Mounted on FR4 Board, t 10 sec. TJ, Tstg RthJA IDM IS PD Symbol VDS VGS ID N-Channel 62.5 /W P-Channel Unit

Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, 250 A VDS = VGS, = -250 VDS 0 V VGS 12 V VDS 0 V VGS 12 V VDS = 20V, VGS 0 V Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS 0 V VDS 20 V, VGS = 55 VDS = -20V, VGS 55 On State Drain Currenta ID(on) VDS 5 V, VGS -5 V, VGS V A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel VDS -10 V, VGS -6.2A N Channel VDD = 10 ID= 1A, VGEN = 6 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch P-Channel VDD = 10 Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width tf trr ID= -1 A, VGEN 1.7 A, di/dt -1.7 A, di/dt A/ s N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min Typ Max

VGS = 7.1A Drain Source On State Resistance* rDS(on) VGS = -6.2A VGS = 6.0A VGS = -5.0A Forward Transconductance* Diode Forward Voltage* Total Gate Charge Gate Source Charge Gate Drain Charge Turn On Time Rise Time gfs VSD Qg Qgs Qgd td(on) tr VDS = 7.1A VDS = 1.7A, VGS = -1.7A, VGS 0 V N-Channel VDS 10 V, VGS = 7.1A


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