Details, datasheet, quote on part number: KLI-5001G
PartKLI-5001G
CategorySensors => Image Sensors => Linear Image Sensors
TitleLinear Image Sensors
DescriptionPixels (HxV) = 5,000 X 1 ;; Pixel Size (H X VÁm) = 7 X 7
CompanyKodak
DatasheetDownload KLI-5001G datasheet
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Features, Applications

KLI-5001G 5000 Element Linear CCD Image Sensor Performance Specification
Eastman Kodak Company Image Sensor Solutions Rochester, New York 14650-2010
Eastman Kodak Company - Image Sensor Solutions

For the most current information regarding this product: Phone: (585) 722-4385 Fax: (585) 477-4947 Web: www.kodak.com/go/imagers E-mail: imagers@kodak.com

Features....................................................................................................................... 3 Description................................................................................................................... 3 Imaging........................................................................................................................ 4 Charge Transport and Sensing.................................................................................... 4 Package Configuration................................................................................................. 4 Pin Description............................................................................................................. 5 Maximum Ratings........................................................................................................ 6 DC Conditions.............................................................................................................. 7 AC Clock Level Conditions........................................................................................... 8 AC Timing.................................................................................................................... 8 Timing Diagram............................................................................................................ 9 Clock Line Capacitance............................................................................................... 10 Image Specifications.................................................................................................... 11 Defect Classification.................................................................................................... 12 Quality Assurance and Reliability................................................................................. 14 Ordering Information.................................................................................................... 15

FIGURES Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Imager Schematic....................................................................................... 3 Packaging Diagram..................................................................................... 4 Typical Output Bias/Buffer Circuit............................................................... 7 Device Timing............................................................................................. 9 Dark Signal Non-uniformity Definition....................................................... 12 Defect Classification................................................................................. 12 Device Responsivity.................................................................................. 13 Device Quantum Efficiency....................................................................... 13 Device Package Configuration.................................................................. 16

Features

High resolution: 5000 pixels On-chip Sample/Hold Wide Dynamic Range No Image Lag High Charge Transfer Efficiency to 2V peak-peak Output Two-Phase Register Clocking On-chip Dark Reference

Description

The is a high resolution, linear array designed for scanned imaging applications. This device contains a row of 5000 active photoelements, consisting of high performance 'pinned diodes' for improved sensitivity, lower noise and elimination of lag. Readout of the pixel data is accomplished through the use of dual CCD shift registers, positioned on either side of the detector array. The sensors are positioned on 7Ám centers with an associated 7Ám aperture spanning the length of the array. The device architecture has on-chip correlated, double-sampling circuitry. The device is manufactured using NMOS, buried channel processing and utilize dual layer polysilicon and dual layer metal technologies. The die size X 1.12mm and the chip is housed 24-pin, 0.600" wide, dual in-line package. Cover glass options include standard clear, or multi-layer anti-reflection coated (MAR).


 

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